Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

Wu, Chia‐Ching

doi:10.1039/c7ra13550e

Cited by 62 publications

(28 citation statements)

References 46 publications

(45 reference statements)

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“…The sheet resistance (R s directly obtained from the four probe measurement), the luminous transmittance in the visible range (calculated from the data of the full wavelength optical trans mittance measured from the 400 nme780 nm according to Ref. [31] of the IAI films and the pure ITO film with the same thickness are plotted in Table 2.…”

Section: Characterization Of the Iai Layermentioning

confidence: 99%

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Wang

Barnabé

Thimont

et al. 2019

Electrochimica Acta

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The "Oielectric/Metal/Oielectric" (OMO) stacked films being used as transparent and conductive (TC) electrodes, have demonstrated excellent application in the ElectroChromic (EC) process and devices. In this work, multilayers (IAI) made of 50 nm of Indium Tin Oxide (IT0)/5 nm of metallic sil ver (Ag)/30 nm of ITO that exhibit band gap, low resistance of 7.4 Q and the high figure of merit of 9.9 x 10 3 Q 1 were introduced in a complete five layer Glass/IAI/NiOx/LlCIO4 PC PMMA/WO3/IAI/Glass ElectroChromic De vice (ECO). The single IAI electrode as well as the two actives EC layers Glass/IAI/Niûx and Glass/IAI{WO 3 were firstly characterized for their TC and EC properties respectively. Then, the EC properties of the complete five layer ECO were analyzed. Fast response time (2.02 s for the bleaching and 225 s for complete coloration), wide optical modulation in the visible light region (-55% at 550 nm), long lifetime (more than 6000 s), large capacity and good stability as well as high coloration efficiency (31.7 cm 2 C 1) were obtained The improved EC performance of ECO were related to the good electrical and optical properties of IAI electrode.

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Section: Characterization Of the Iai Layermentioning

confidence: 99%

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Wang

Barnabé

Thimont

et al. 2019

Electrochimica Acta

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“…Traditionally, these electrodes have been based on degenerate doped wide band gap semiconductors such as gallium-doped zinc oxide (GZO), fluorine-doped tin oxide (FTO) or tin-doped indium oxide (ITO) [2][3][4]. Transparent conducting oxides (TCOs) are widely used in research and industrial applications including LCD screens, touch panels, transparent electronics, or photovoltaic devices [5][6][7][8]. Particularly for photovoltaics, ITO is commonly used as the front transparent conductive electrode and plays a fundamental role in many types of solar cells, from conventional crystalline silicon solar cells to organic solar cells [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

et al. 2020

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As optoelectronic devices continue to improve, control over film thickness has become crucial, especially in applications that require ultra-thin films. A variety of undesired effects may arise depending on the specific growth mechanism of each material, for instance a percolation threshold thickness is present in Volmer-Webber growth of materials such as silver. In this paper, we explore the introduction of aluminum in silver films as a mechanism to grow ultrathin metallic films of high transparency and low sheet resistance, suitable for many optoelectronic applications. Furthermore, we implemented such ultra-thin metallic films in Dielectric/Metal/Dielectric (DMD) structures based on Aluminum-doped Zinc Oxide (AZO) as the dielectric with an ultra-thin silver aluminum (Ag:Al) metallic interlayer. The multilayer structures were deposited by magnetron sputtering, which offers an industrial advantage and superior reliability over thermally evaporated DMDs. Finally, we tested the optimized DMD structures as a front contact for n-type silicon solar cells by introducing a hole-selective vanadium pentoxide (V2O5) dielectric layer.

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“…Transparent electrodes (i.e., thin films based on transparent conductive (TC) materials) are some of the most important parts of many optoelectronic devices, such as touch panels, organic light-emitting diodes (OLEDs), optical sensors, and solar cells [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…In order to keep a low resistance and conversely maintain high optical transmittance, oxide-metal-oxide multilayered structures have recently received renewed interest as a highly promising route towards the production of flexible large area OLEDs and solar cells [3,[18][19][20]. In this case, Ag is the optimal metal because of its low resistivity (approximately 1.6 × 10 −6 Ω•cm) and relatively low cost [21], whereas Ga-doped ZnO (GZO) is the optimal oxide due to its abundance, low cost, superior optical features, and rather high stability [22,23].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Fabrication of High-Performance and Stable GZO/Ag/GZO Multilayer Structures for Transparent Electrode Applications

et al. 2020

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Presently, research and development of indium-free stable highly transparent conductive (TC) materials is of paramount importance for the blooming world of information display systems and solar energy conversion. Development of devices based on flexible organic substrates further narrows the choice of possible TC materials due to the need for lower deposition and process temperatures. In our work, the structural, electrical, and optical performances of Ga-doped ZnO/Ag/Ga-doped ZnO (GZO/Ag/GZO) multilayered structures deposited on glass substrates by direct current (DC) magnetron sputtering in a pure Ar medium without any purposeful substrate heating have been investigated. The highest figure of merit achieved was 5.15 × 10−2 Ω−1 for the symmetric GZO/Ag/GZO multilayer, featuring GZO and Ag thicknesses of 40 and 10 nm, respectively, while the average optical transmittance was over 81% in the visible range of wavelengths and the resistivity was 2.2 × 10−5 Ω·cm. Additionally, the good durability of the performances of the multilayer structures was demonstrated by their testing in the context of long-term storage (over 500 days) in standard environmental conditions.

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Highly flexible touch screen panel fabricated with silver-inserted transparent ITO triple-layer structures

Abstract: A flexible and transparent amorphous-indium tin oxide/silver/crystalline-indium tin oxide (a-ITO/Ag/c-ITO) triple-layer structure was prepared as an electrode for capacitive-type touch screen panels (TSPs).

Cited by 62 publications

References 46 publications

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Optimized properties of innovative ElectroChromic Device using ITO / Ag / ITO electrodes

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

Low-Temperature Fabrication of High-Performance and Stable GZO/Ag/GZO Multilayer Structures for Transparent Electrode Applications

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