Crystal growth of aluminum nitride under high pressure of nitrogen

Boćkowski, M.; Wróblewski, M.; Łucznik, B.; Grzegory, I.

doi:10.1016/s1369-8001(02)00014-8

Cited by 40 publications

(36 citation statements)

References 8 publications

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“…There have been several attempts to grow bulk AlN crystals via techniques such as sublimation-recondensation [1][2][3] and solution growth [4]. However, it is quite difficult to expand the size of AlN crystal by these methods.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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A thermodynamic analysis on hydride vapor phase epitaxy (HVPE) of AlN using AlCl 3 and NH 3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl 3 , AlCl 2 , AlCl and (AlCl 3 ) 2 ] in equilibrium with AlN are significantly low in the temperature range of 500 -1500 °C when the input V/III ratio is above 1. This means that the driving force for AlN growth (∆P Al ) becomes almost equal to the input partial pressure of AlCl 3 , which is quite different from HVPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.

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Section: Introductionmentioning

confidence: 99%

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Kumagai¹,

Takemoto²,

Kikuchi³

et al. 2006

Physica Status Solidi (b)

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“…It should be noted that dissolution of the dissociated N into the Al melt is instantaneous due to the absence of activation energy for chemisorption, 28 while the chemisorption of N 2 requires overcoming activation energy barrier (308 kJ/mol) due to the transition from physisorbed state to chemisorbed state. 7 Furthermore, solubility of N in Al at 2000 K was estimated to be about 0.3 at%, 29 indicating that dissolution of the dissociated N is thermodynamically favorable at the gas-melt interface. Thus, the arc melting method can be an effective route to dissolve significant amount of N into Al melt and improve wettability, and AlN can be explosively in situ formed at the gas-melt interface and under the interface (Step 3), which leads to volume nitridation of Al.…”

Section: Discussionmentioning

confidence: 99%

In situ synthesis of cold-rollable aluminum–aluminum nitride composites via arc plasma-induced accelerated volume nitridation

Lee

Park

2016

J. Mater. Res.

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Our study proposes in situ synthesis of cold-rollable aluminum nitride (AlN) reinforced aluminum matrix composites with attractive thermal properties via arc plasma-induced accelerated volume nitridation (APAVN). Within three minutes of repeated APAVN using commercial nitrogen gas, volume fraction of AlN increased up to 40 vol%, which is the highest value ever reported by in situ nitridation of pure aluminum. The composites contained homogeneously dispersed AlN particulates with strong interfacial bonding and low interfacial thermal resistance, which resulted in unique combination of a relatively low coefficient of thermal expansion and high specific thermal conductivity. APAVN resulted from instantaneous chemisorption of dissociated nitrogen, enhanced diffusion of dissolved nitrogen, and improved wettability, which led to much more AlN formation, ;2.94 Â 10 À1 g/(min cm 3 ), which is about 400 times higher than that in the gas bubbling method. These results would ultimately give us a promising strategy for continuous production of in situ Al-AlN composites for heat sink applications through cost-effective processing.

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“…Recently, Kumagai et al 7) and Kangawa et al 8) grew AlN single crystal by the hydride vapor phase epitaxy method and Li 3 N solution growth method, respectively, using bulk AlN as a seed crystal fabricated by the sublimation method. Bockowski et al fabricated AlN crystals from Al melt at high temperature up to 2000 K and high N 2 pressure of order of 1 GPa without seed crystal 9) . Their AlN crystals have very low threading dislocation density and impurity concentration.…”

Section: Introductionmentioning

confidence: 99%

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

2017

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We developed an original liquid phase epitaxy technique that uses Ga-Al solution to grow AlN on surface nitrided sapphire substrates. In this paper, effects of temperature, solution composition, and N 2 gas ow rate on the growth of AlN layer were investigated. The AlN layer grown in the solution with higher Al content and higher growth temperature tended to dissolve into the solution, thus, the AlN layers exhibited inhomogeneous surface. The growth rate had a maximum at 60 mol%Al and at 1673 K for solution composition dependence and growth temperature dependence, respectively. On the other hand, the growth rate monotonically increased with increasing N 2 gas ow rate. Based on these results, growth mechanism and rate-determined step of this liquid phase epitaxy process were discussed.

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Crystal growth of aluminum nitride under high pressure of nitrogen

Cited by 40 publications

References 8 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

In situ synthesis of cold-rollable aluminum–aluminum nitride composites via arc plasma-induced accelerated volume nitridation

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

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Crystal growth of aluminum nitride under high pressure of nitrogen

Cited by 40 publications

References 8 publications

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3

In situ synthesis of cold-rollable aluminum–aluminum nitride composites via arc plasma-induced accelerated volume nitridation

Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

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Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃