Crystal field analysis of the absorption spectra and electron–phonon interaction in Ca3Sc2Ge3O12:Ni2+

Brik, M.G.

doi:10.1016/j.jpcs.2005.11.005

Cited by 31 publications

(17 citation statements)

References 28 publications

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“…In addition, by considering the electron-phonon interaction, the coordinate configurational model in harmonic approximation can be used22. As shown in Figure 3, with increasing film thickness, the decrease of lattice parameter and distortion may lead to the reduction of E dis and electron-phonon coupling14. If the electron-phonon interaction is weak, the reduced non-radiative transitions will result in the long emission lifetime as well as the narrow FWHM.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, transition metal Ni 2+ ion has been chosen as dopant in the studied luminescent thin films since the fluctuation of crystal-field strength may result in the modulation of the energy level between the 3 T 2 and 3 A 2 levels of Ni 2+ ion14. Therefore, one expects that the luminescence of Ni 2+ ions can be tuned by fine-tuning the crystal field strength under strain stimulus.…”

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confidence: 99%

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Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Bai

Zhang

Hao

2014

Sci Rep

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We report the tunable near-infrared luminescence of Ni2+ doped SrTiO3 (STO:Ni) thin film grown on piezoelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) substrate via strain engineering differing from conventional chemical approach. Through controlling the thickness of STO:Ni film, the luminescent properties of the films including emission wavelength and bandwidth, as well as lifetime can be effectively tuned. The observed phenomena can be explained by the variation in the crystal field around Ni2+ ions caused by strain due to the lattice mismatch. Moreover, the modulation of strain can be controlled under an external electric field via converse piezoelectric effect of PMN-PT used in this work. Consequently, controllable emission of the STO:Ni thin film is demonstrated in a reversible and real-time way, arising from the biaxial strain produced by piezoelectric PMN-PT. Physical mechanism behind the observation is discussed. This work will open a door for not only investigating the luminescent properties of the phosphors via piezoelectric platform, but also potentially developing novel planar light sources.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Bai

Zhang

Hao

2014

Sci Rep

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“…At the same time they are good matrices for different rare earth ions [8][9][10][11]. The existing data is restrained by consideration of the local crystalline fields and the influence of the rare earth ions [12][13][14][15]. Intrinsic defects also may play an important role in determining the optical susceptibilities [16,17].…”

Section: +mentioning

confidence: 99%

Optical second harmonic generation in Yttrium Aluminum Borate single crystals (theoretical simulation and experiment)

2008

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Experimental measurements of the second order susceptibilities for the second harmonic generation are reported for YAl 3 (BO 3 ) 4 (YAB) single crystals for the two principal tensor components xyz and yyy. First principle's calculation of the linear and nonlinear optical susceptibilities for Yttrium Aluminum Borate YAl 3 (BO 3 ) 4 (YAB) crystal have been carried out within a framework of the full-potential linear augmented plane wave (FP-LAPW) method. Our calculations show a large anisotropy of the linear and nonlinear optical susceptibilities. The observed dependences of the second order susceptibilities for the static frequency limit and for the frequency may be a consequence of different contribution of electron-phonon interactions. The imaginary parts of the second order SHG susceptibility , , , and are evaluated. We find that the 2ω inter-band and intra-band contributions to the real and imaginary parts of show opposite signs. The calculated second order susceptibilities are in reasonable good agreement with the experimental measurements.

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“…With elevating the temperature, the excited level of 4 G 5/2 can overcome the energy barrier through absorbing the thermal activation energy, and then nonradiatively decays to the ground state of 6 H 5/2 through the crossover between the levels of 6 H 5/2 and 4 G 5/2 . As a consequence, the electron‐phonon interaction prevails when the surrounding temperature of studied samples is high, leading to quenched emission intensity . Note that, when the temperature was 423 K, the emission intensity still remained at approximately 70.9% of its origin value at 303 K, as shown in Figure B, implying that the Sm 3+ ‐activated CaGd 2 (MoO 4 ) 4 compounds possessed excellent thermal stability, which is suitable for phosphor‐converted WLEDs as a red‐emitting component.…”

Section: Resultsmentioning

confidence: 89%

Near‐ultraviolet light–induced dazzling red emission in CaGd₂(MoO₄)₄:2xSm³⁺ compounds for phosphor‐converted WLEDs

Zhou

2019

J Am Ceram Soc

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The Sm3+‐activated CaGd2(MoO4)4 phosphors were prepared through a sol‐gel reaction route. From the results of excitation spectrum, three‐dimensional emission spectra and contour lines, it was confirmed that the near‐ultraviolet (NUV) light was the proper excitation light source for the synthesized phosphors. Under 405 nm irradiation, the luminescent behaviors of the studied samples were revealed to be dependent on the Sm3+ ion concentration and its optimal value of 0.03 mol was obtained. Through theoretical analysis, it is evident that the dipole‐dipole interaction can be responsible for the involved concentration quenching mechanism in the final products and the critical distance was 39.7 Å. Moreover, the temperature‐dependent emission spectra demonstrated that the studied samples had admirable thermal stability and the activation energy was decided to be 0.21 eV. Furthermore, the internal quantum efficiency of the Sm3+‐activated CaGd2(MoO4)4 phosphors was found to be 21.6%. Finally, to explore the practical applications of obtained compounds for indoor illumination, a white light‐emitting diode (WLED) device which contained a NUV chip, prepared phosphors, and commercial blue‐emitting and green‐emitting phosphors was packaged. The packaged WLEDs device can emit dazzling white light with satisfied color coordinate of (0.305, 0.318), proper color rendering index (82.6), and correlated color temperature (7069 K).

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Crystal field analysis of the absorption spectra and electron–phonon interaction in Ca3Sc2Ge3O12:Ni2+

Cited by 31 publications

References 28 publications

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Optical second harmonic generation in Yttrium Aluminum Borate single crystals (theoretical simulation and experiment)

Near‐ultraviolet light–induced dazzling red emission in CaGd₂(MoO₄)₄:2xSm³⁺ compounds for phosphor‐converted WLEDs

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Crystal field analysis of the absorption spectra and electron–phonon interaction in Ca3Sc2Ge3O12:Ni2+

Cited by 31 publications

References 28 publications

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Tuning of near-infrared luminescence of SrTiO3:Ni2+ thin films grown on piezoelectric PMN-PT via strain engineering

Optical second harmonic generation in Yttrium Aluminum Borate single crystals (theoretical simulation and experiment)

Near‐ultraviolet light–induced dazzling red emission in CaGd2(MoO4)4:2xSm3+ compounds for phosphor‐converted WLEDs

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Near‐ultraviolet light–induced dazzling red emission in CaGd₂(MoO₄)₄:2xSm³⁺ compounds for phosphor‐converted WLEDs