Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version

Low-Noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors

“…A production of ASICs based on the 0.35 µm SiGe biCMOS technology from AMS foundry has been delivered and will be tested soon. This technology has demonstrated T = 4.2 K performances [28]. SiGe bipolar transistors will be used for amplification and pMOS/nMOS switches will be used for calibration and reset purposes.…”

Cryogenic instrumentation based on Silicon technology: from Astrophysics Cryo-Detectors to Quantum computing

“…The quasi-classical multiplexing 34:1 was tested at cold, the noise is 1 nV/ (Hz) @ 1 kHz, at the level of the thermal noise of the sensor, and the foreseen total dissipation is ≈ 6 mW@2.5 K for 4000 pixels. One can find a complete description of this electronics in [2].…”

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

“…Previously, III-V high electron mobility transistors (HEMTs) have been successfully demonstrated for cryogenic circuit applications [10][11][12][13][14][15][16][17][18][19], which exhibit excellent transistor-like behavior at cryogenic temperature. Unfortunately, the III-V semiconductor technology is incompatible with Si complementary metal-oxidesemiconductor (CMOS) technology and cannot be integrated [20].…”