Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT

Jabbari, Iraj; Baïra, M.; Maâref, H.; Mghaieth, Ridha

doi:10.1016/j.microrel.2020.114009

Cited by 6 publications

(7 citation statements)

References 37 publications

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“…Furthermore, based on the Δ E extracted from the V off modeling of ref. [32], a donor‐like trap with an energy level of roughly 0.566 eV overhead the conduction band can be inferred. This defect probably originates from the dehydrogenation of the nitrogen anti‐site, which may be located in the GaN layer near the AlGaN/GaN interface.…”

Section: Model Descriptionmentioning

confidence: 97%

“…This defect probably originates from the dehydrogenation of the nitrogen anti‐site, which may be located in the GaN layer near the AlGaN/GaN interface. [ 32,40 ] Figure 2b illustrates how the change in the Schottky barrier and the trapping effect can also contribute to the increase in V off with temperature. Figure 2c shows the variation trend of the normalized trap potential

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Section: Model Descriptionmentioning

confidence: 99%

“…[24,30] The temperature dependence of V off is mainly derived from the role of traps. [28,31,32] Therefore, Equation (1) can be modified to (2), where V off0 is the threshold voltage of the device at 0 K, V trap (T ) is the V off drift caused by the trapping effect, α is the temperature coefficient characterizing the change of ϕ b , and the unit is V K À1 . However, due to the Fermi level pinning effect on the surface of AlGaN, ϕ b is little affected by temperature.…”

Section: Model Description 21 Threshold Voltagementioning

confidence: 99%

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An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicable temperature range of the mobility model is further extended. At cryogenic temperatures, the saturation current, saturation velocity, and sub‐threshold swing of the device tend to saturate as well as be temperature‐independent, which can be accurately modeled by using the equivalent temperature and applying the crucial temperature to quantify the turning point. Furthermore, the SHE modeling incorporates the temperature dependence of the material's thermal conductivity. The accuracy of the model is verified by experimental data at low (4.2–300 K) and high (298–773 K) temperatures. The proposed model overcomes the limitations of existing models applied at wide ambient temperatures.

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Section: Model Descriptionmentioning

confidence: 97%

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…”

Section: Model Descriptionmentioning

confidence: 99%

Section: Model Description 21 Threshold Voltagementioning

confidence: 99%

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An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wu,

Yao,

Liu

et al. 2024

Physica Status Solidi (a)

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“…22 The surface analysis is important in terms of GaN-based device performance because these defects in structure can be formed locally charge centers, which is negatively affected the HEMTs. 23,24 In literature, GaN-based materials are grown using MOCVD and molecular beam epitaxy (MBE) system. Especially, compared with MBE systems, MOCVD has some advantages such as high growth rate, mass production, or growth on more than one substrates.…”

Section: Introductionmentioning

confidence: 99%

“…In general, AFM measurement is used to show these morphological defects 22 . The surface analysis is important in terms of GaN‐based device performance because these defects in structure can be formed locally charge centers, which is negatively affected the HEMTs 23,24 …”

Section: Introductionmentioning

confidence: 99%

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 Â 10 8 cm À2 for Sample B with a lattice-matched In 0.17 Al 0.83 N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness.The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

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A Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction Applied to Single Stage Low Noise Amplifier

Belmecheri

Djebari

2022

Trans. Electr. Electron. Mater.

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Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT

Cited by 6 publications

References 37 publications

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

A Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction Applied to Single Stage Low Noise Amplifier

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