Crossover from retro to specular Andreev reflections in bilayer graphene

Efetov, Dmitri K.; Efetov, K. B.

doi:10.1103/physrevb.94.075403

Cited by 41 publications

(82 citation statements)

References 20 publications

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“…Differences between this study and that of Ref. 15 are briefly discussed with an emphasis on the role of λ. We set = 1 throughout this paper.…”

Section: )mentioning

confidence: 80%

“…Hence, the effects of a pn junction were not incorporated in the analysis of Ref. 15. Although the result in Sect.…”

Section: Summary and Discussionmentioning

confidence: 99%

“…3 in the case of λ = 0 corresponds to that of Ref. 15, they are not equivalent in the sense that intervalley scattering was not incorporated in the effective mass theory of Ref.…”

Section: Summary and Discussionmentioning

confidence: 99%

“…Another difference concerns the parameter U 0 , which was set equal to 1.0 eV (i.e., U 0 > γ 1 ) in this study in accordance with the difference between Φ NbSe2 and Φ BG while the case of U 0 ≪ γ 1 was mainly considered in Ref. 15.…”

Section: Summary and Discussionmentioning

confidence: 99%

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Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point

2017

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A graphene sheet partially covered with a bulk superconductor serves as a normal conductorsuperconductor (NS) junction, in which electron transport is mainly governed by Andreev reflection (AR). As excess carriers induced over the covered region penetrate into the uncovered region over a screening length, the charge neutrality point (CNP) in the uncovered region shifts only near the NS interface. We theoretically study the electron transport in a bilayer graphene junction taking account of such spatial variation of the CNP in the electron-doped case. When the Fermi level is close to the CNP away from the NS interface, the AR takes place in a specular manner owing to the diffraction of a reflected hole occurring at a pn junction, which is naturally formed in the uncovered region. It is shown that the differential conductance shows an unusual asymmetric behavior as a function of bias voltage under the influence of the pn junction. It is also shown that, if the Fermi level is located below the CNP, the pn junction gives rise to quasi-bound states near the NS interface, leading to the appearance of resonant peaks in the differential conductance.

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“…Differences between this study and that of Ref. 15 are briefly discussed with an emphasis on the role of λ. We set = 1 throughout this paper.…”

Section: )mentioning

confidence: 80%

“…Hence, the effects of a pn junction were not incorporated in the analysis of Ref. 15. Although the result in Sect.…”

Section: Summary and Discussionmentioning

confidence: 99%

“…3 in the case of λ = 0 corresponds to that of Ref. 15, they are not equivalent in the sense that intervalley scattering was not incorporated in the effective mass theory of Ref.…”

Section: Summary and Discussionmentioning

confidence: 99%

Section: Summary and Discussionmentioning

confidence: 99%

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Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point

2017

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“…High quantum efficiency can be achieved by critical coupling of the graphene to a photonic crystal cavity. The graphene sheet is further coupled to two closely spaced superconducting electrodes that form a Josephson junction and allow for a supercurrent to flow through the graphene [85][86][87]. Upon absorption of a single photon, the temperature of the device is increased above the critical temperature of the superconductor, creating a detectable voltage pulse across the device.…”

Section: Ultrasensitive Graphene-based Bolometers and Single Photon Dmentioning

confidence: 99%

Active 2D materials for on-chip nanophotonics and quantum optics

et al. 2017

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Two-dimensional materials have emerged as promising candidates to augment existing optical networks for metrology, sensing, and telecommunication, both in the classical and quantum mechanical regimes. Here, we review the development of several on-chip photonic components ranging from electro-optic modulators, photodetectors, bolometers, and light sources that are essential building blocks for a fully integrated nanophotonic and quantum photonic circuit.

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Elastic wave transport in disordered, isotropic media: a supersymmetric sigma model

Photiadis

2017

Annalen der Physik

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Starting from a continuum description of a disordered elastic medium, we have derived a supersymmetric field theoretic model enabling the prediction of ensemble average correlation functions that fully takes polarization effects into account. The model enables both perturbative and nonperturbative calculations in a similar fashion as corresponding models of disordered electronic systems. At intermediate distances, we show that a Hubbard-Stratonovic transformation can be carried out and obtain a supermatrix field theory. At distances far greater than the mean free paths of the system, we show that the action reduces to a nonlinear supersymmetric sigma model formally identical to that for a scalar field. Our results yield a bare diffusion constant given by a density of states weighted average of the classical diffusion constants of the coherent potential approximation(CPA) medium.

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Crossover from retro to specular Andreev reflections in bilayer graphene

Cited by 41 publications

References 20 publications

Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point

Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point

Active 2D materials for on-chip nanophotonics and quantum optics

Elastic wave transport in disordered, isotropic media: a supersymmetric sigma model

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