Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices

Zuo, S. L.; Yu, E. T.; Allerman, Andrew A.; Biefeld, R. M.

doi:10.1116/1.590826

Cited by 8 publications

(4 citation statements)

References 19 publications

(12 reference statements)

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“…4͑a͒. Such features are indicative of As-rich and Sb-rich regions with boundaries contained within (11 1) and (1 11) planes, 19 reminiscent of CuPt-B type ordering, the most frequently observed type of ordering within zinc blende III-V semiconductors.…”

Section: Fig 2 X-ray Diffraction Measurements and Simulations Formentioning

confidence: 96%

Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures

Zuo

Hong

et al. 2002

Journal of Applied Physics

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We have used cross-sectional scanning tunneling microscopy ͑STM͒ to perform nanometer-scale characterization of compositional structure and interfacial properties within GaAs 1Ϫx Sb x /GaAs double-quantum well structures. An algorithm has been devised based on analysis of strain effects in STM data to obtain detailed, quantitative compositional profiles within alloy layers. Using this and other analysis techniques, we have assessed the influence of group V anion soaks at each heterojunction interface on interface roughness and abruptness. An As soak at the GaAs-on-GaAs 1Ϫx Sb x interfaces reduces interface roughness but leads to a slight loss of abruptness at the interface, while an AsϩSb soak at GaAs 1Ϫx Sb x-on-GaAs interfaces improves abruptness while leaving interface roughness largely unaffected. Significant compositional grading at the nanometer scale is observed within the GaAs 1Ϫx Sb x layers.

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Section: Fig 2 X-ray Diffraction Measurements and Simulations Formentioning

confidence: 96%

Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures

Zuo

Hong

et al. 2002

Journal of Applied Physics

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“…With the advent of scanning tunneling microscopy (STM), it is now possible to observe the surface of atomic structures and determine what kind of atoms the structure contains [7]. Cross-sectional STM (XSTM) [8][9][10][11] is a powerful technique for directly investigating atomic structure. We report on the first STM observation of CuPt-B-type ordered GaAsSb using XSTM [10,11] to directly probe the arrangement of surface atoms on GaAsSb ordered structures.…”

Section: Introductionmentioning

confidence: 99%

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Gomyo

Ohkouchi

Kawamura

2007

Journal of Crystal Growth

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“…Recent cross-sectional scanning tunneling microscopy ͑STM͒ data in a variety of material systems show that local variations in composition, likely initiated at the growth front, develop into lateral composition modulation. [1][2][3] The roughness of interfaces in device structures, furthermore, has been shown to be related to the stoichiometry of the surface reconstruction. 4 Finally, surface reconstructions have also been directly linked to ordering in these alloys.…”

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confidence: 99%

Surface reconstructions of In-enriched InGaAs alloys

Millunchick

Riposan

Dall

et al. 2003

Applied Physics Letters

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The atomic structure of In 0.81 Ga 0.19 As/InP alloy layers was examined using in situ scanning tunneling microscopy. The ͑2ϫ3͒ reconstruction observed during growth by reflection high-energy electron diffraction represents a combination of surface structures, including a ␤2͑2ϫ4͒ commonly observed on GaAs͑001͒ and InAs͑001͒ surfaces, and a disordered ͑4ϫ3͒ that is unique to alloy systems. The proposed ͑4ϫ3͒ structure is comprised of both anion and cation dimers. Empty and filled states images show that the features reverse contrast with sample bias, in agreement with the model.

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Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices

Cited by 8 publications

References 19 publications

Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures

Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures

Atomic arrangement in a CuPt-B-type ordered GaAsSb layer grown by molecular beam epitaxy observed by cross sectional scanning tunneling microscope

Surface reconstructions of In-enriched InGaAs alloys

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