Surface reconstructions of In-enriched InGaAs alloys

Millunchick, Joanna Mirecki; Riposan, A.; Dall, B.J.; Pearson, Chris; Orr, Bradford G.

doi:10.1063/1.1602557

Cited by 22 publications

(10 citation statements)

References 23 publications

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“…Within the terrace, the rows are spaced approximately 12 A apart, which corresponds to 3 the underlying bulk lattice spacing along [110]. The terrace reconstruction is consistent with a (n 3) reconstruction observed in InGaAs alloys [18,21]. The step height is nearly 3 A, which is the height of one monolayer, while the 22 4 island height is roughly 1:5…”

supporting

confidence: 52%

“…The LCM in these structures is therefore a result of both thickness variations of the individual layers and compositional variations within each layer. This is especially clear for the InAs-terminated surfaces on which the 2D islands possess a lateral correlation consistent with the modulation wavelength and also have reconstructions associated with high In content [21].…”

Section: P H Y S I C a L R E V I E W L E T T E R Smentioning

confidence: 88%

“…The height difference between the islands and terraces indicates that the islands nucleate on top of the terraces and are associated with local In enrichment of the alloy layer [21].…”

mentioning

confidence: 99%

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Imaging the Evolution of Lateral Composition Modulation in Strained Alloy Superlattices

et al. 2004

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Scanning tunneling microscopy is used to investigate the morphological evolution of GaAs/InAs short period superlattice structures. The layers of the superlattice, either grown in compression or tension, exhibit an island or trench morphology. With increasing film thickness, the islands or trenches grow in size and develop a characteristic spacing along [110] of approximately 150 A. This is the first experimental evidence to suggest that lateral composition modulation arises from both thickness variations of the layers and compositional nonuniformities within the atomic plane.

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supporting

confidence: 52%

Section: P H Y S I C a L R E V I E W L E T T E R Smentioning

confidence: 88%

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Imaging the Evolution of Lateral Composition Modulation in Strained Alloy Superlattices

et al. 2004

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“…19 As having regions of both α2 and β2 surface constructions (21). The high standard deviation of missing dimer unit cells, 13%, makes this alloy missing dimer unit cell percentage comparable to both In 0.27 Ga 0.73 As (42% +/-13%) and In 0.53 Ga 0.47 As (71% +/-6%), consistent with the hypothesis of surface strain in the In/Ga alloys leading to the presence of missing dimer unit cells.…”

Section: Part 1: Density Function Modeling Of Missing Dimer Defect Sitesmentioning

confidence: 99%

(Invited) Surface Preparation and In/Ga Alloying Effects on InGaAs(001)-(2x4) Surfaces For ALD Gate Oxide Deposition

et al. 2013

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High resolution STM images of In 0.53 Ga 0.47 As(001)-(2x4) were obtained and surface defects were quantified as a function of sample preparation technique.Published STM images of InGaAs(001)-(2x4) samples of varying In composition were examined and missing dimer unit cells, adatom trough defects, and incomplete atomic terraces were quantified for comparison with the In 0.53 Ga 0.47 As(001)-(2x4) surface. Density Functional Theory (DFT) modeling of α2(2x4) and β2(2x4) unit cell constructions and electronic structures show that the missing dimer defect creates conduction band edge states not readily passivated by trimethy aluminum; therefore, the density of dimer defects may cause trap state formation at oxide/InGaAs(001) interfaces.

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“…154) The In content in the wetting layer is close to the stable surface composition of the In x Ga 1−x As=GaAs(001)-(n × 3) reconstruction suggested by surface XRD, 155,156) scanning tunneling microscopy, [157][158][159][160] and first-principles calculations. 161) …”

Section: Qd Growthmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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Surface reconstructions of In-enriched InGaAs alloys

Cited by 22 publications

References 23 publications

Imaging the Evolution of Lateral Composition Modulation in Strained Alloy Superlattices

Imaging the Evolution of Lateral Composition Modulation in Strained Alloy Superlattices

(Invited) Surface Preparation and In/Ga Alloying Effects on InGaAs(001)-(2x4) Surfaces For ALD Gate Oxide Deposition

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

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