Crack-like grain-boundary diffusion wedges in thin metal films

Gao, Huajian; Zhang, L.; Nix, William D.; Thompson, Carl V.; Arzt, Eduard

doi:10.1016/s1359-6454(99)00178-0

Cited by 203 publications

(145 citation statements)

References 25 publications

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“…The geometry of the crack is shown in ®gure 4 (a), with the dislocation analogue in ®gure 4 (b). This analogy has been used in a recent theoretical study of grain-boundary`di usion wedges' by Gao et al (1999), although they concentrated on timedependent stress relaxation phenomena rather than cracking per se. These workers used Head's (1953) approach to describe the stress ®eld of an array of in®nitesimal edge dislocations, b…x 0 † dx 0 , extending from the free surface (xˆ0) to the tip of the di usion wedge (or crack) at xˆc.…”

Section: } 4 Discussionmentioning

confidence: 99%

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The surface topography of cracks in strained In_0.72Ga_0.28P films

Wu¹,

Weatherly²

2000

Philosophical Magazine Letters

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth atThe surface topography of cracks in strained In0.72Ga0.28P films Wu, X.; Weatherly, G. C.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744241&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744241&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1080/09500830050110468Philosophical magazine letters, 80, 8, pp. 535-541, 2000 PHILOSOPHICAL MAGAZINE LETTERS, 2000 The surface topography of cracks in strained In 0:72 Ga 0:28 P ®lms ABSTRACTCracks in a 2% tensile strained In 0:72 Ga 0:28 P ®lm grown on an InP substrate by molecular-beam epitaxy have been studied by cross-section transmission electron microscopy and scanning probe microscopy. A dislocation analogue (i.e. replacing the crack by an array of equivalent in®nitesimal edge dislocations) is employed to account for the ratio of the crack-opening displacement to the normal surface displacement associated with the crack.

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Section: } 4 Discussionmentioning

confidence: 99%

“……3 † Gao et al (1999) have given the solution to equation (3). They showed that the crack-opening displacement " c 0 b…x 0 † dx 0 at the free surface, is approximately 5:8¼c=E, where E is Young's modulus.…”

Section: } 4 Discussionmentioning

confidence: 99%

The surface topography of cracks in strained In_0.72Ga_0.28P films

Wu¹,

Weatherly²

2000

Philosophical Magazine Letters

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“…Moving pre-existing dislocations inside single initially large bamboo grains causes the formation of subgrains (grains with a misorientation lower than 10°) [6]. Then GB diffusive deformation largely dominates plastic strain due to thermal gradients [4,5]. In electrothermally aged devices, diffusion, and especially GB diffusion, is very probably at the origin of cavities formation as well as cracks running from the surface to the transistor area following the GBs (Fig.…”

Section: Al Metallization Outside Of the Bonding Areamentioning

confidence: 99%

“…As aging progresses, the degradation of the metal may increase its resistance, which in turn will increase the temperature of the device in the on-state and therefore augment the mechanical stress. This feedback causes a degradation of the top metal through specific processes [4,5]. The wire bondings, that are ultrasonic cold welded on top of this metallization, complexify significantly the initial device structure [6].…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of power module source metal degradation during electro-thermal aging

Ruffilli

Berkani

Dupuy³

et al. 2017

Microelectronics Reliability

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The long-term reliability of power devices for applications in the automotive industry is limited by the electrothermal and/or thermo-mechanical aging of the metallic parts. In the present work, we characterize the bonding wire and source metallization degradation of power MOSFETs-based devices under accelerated aging conditions, through electron and ion microscopy. The metal degradation is driven by an enhanced self-diffusion of aluminium (Al) atoms along the grain boundaries and a generalized fatigue crack propagation from the surface down to the silicon (Si) bulk. The metallization under the wire bonds is a critical location because it is initially plastically deformed during the bonding process. In addition, the wire-metal interface presents several imperfections, such as small cavities and Al oxide residues. During the electro-thermal cycles, they could be the starting point for harmful cracks that run along the interface (and eventually cause the wire lift-off or the cracking of the substrate). Whichever the propagation direction, the generation of these cracks locally increases the device resistance and temperature, and accelerates the aging process until failure.Mechanisms of power module source metal degradation during electro-thermal aging.

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“…On prédit que le fluage puisse se produire à d'autant plus basse température que les films sont minces. Gao [50] a modélisé le fluage diffusionnel confiné dans des films de Cu. Dans le cas des films de siliciures la relaxation par un mécanisme diffusionnel requiert le mouvement des deux espèces atomiques (le métal et le silicium).…”

Section: Propriétés Mécaniques Des Siliciures : éLasticité Et Plasticitéunclassified

Les siliciures de métaux de transition en microélectronique : propriétés mécaniques et contraintes induites au cours de la formation en phase solide

Thomas

2009

PlastOx 2007 - Mécanismes Et Mécanique Des Interactions Plasticité - Environnement

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Résumé. Depuis le début des années 1980, des siliciures de métaux de transition (WSi 2 , TiSi 2 , CoSi 2 , NiSi) sont utilisés comme matériaux de contact et d'interconnection dans les dispositifs de la microélectronique. Ils sont formés par diffusion réactive entre un film mince de métal et le silicium. Des contraintes importantes se développent lors de la formation de la nouvelle phase intermétallique. Ces contraintes peuvent être analysées expérimentalement par mesures de courbure et diffraction des rayons X in situ. Les études expérimentales montrent que les paramètres importants qui contrôlent le développement de ces contraintes sont : (i) la variation de volume molaire. (ii) la cinétique de croissance. (iii) le mécanisme de relaxation des contraintes. Les modèles existants permettent une description phénoménologique de l'évolution des contraintes mais une compréhension physique plus fine nécessite la connaissance des propriétés mécaniques des couches très minces de siliciures.

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Crack-like grain-boundary diffusion wedges in thin metal films

Cited by 203 publications

References 25 publications

The surface topography of cracks in strained In_0.72Ga_0.28P films

The surface topography of cracks in strained In_0.72Ga_0.28P films

Mechanisms of power module source metal degradation during electro-thermal aging

Les siliciures de métaux de transition en microélectronique : propriétés mécaniques et contraintes induites au cours de la formation en phase solide

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