The surface topography of cracks in strained In_0.72Ga_0.28P films

Abstract

Access and use of this website and the material on it are subject to the Terms and Conditions set forth atThe surface topography of cracks in strained In0.72Ga0.28P films Wu, X.; Weatherly, G. C.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744241&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744241&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1080/09500830050110468Philosophical magazine letters, 80, 8, pp. 535-541, 2000 PHILOSOPHICAL MAGAZINE LETTERS, 2000 The surface topography of cracks in strained In 0:72 Ga 0:28 P ®lms ABSTRACTCracks in a 2% tensile strained In 0:72 Ga 0:28 P ®lm grown on an InP substrate by molecular-beam epitaxy have been studied by cross-section transmission electron microscopy and scanning probe microscopy. A dislocation analogue (i.e. replacing the crack by an array of equivalent in®nitesimal edge dislocations) is employed to account for the ratio of the crack-opening displacement to the normal surface displacement associated with the crack.

TEM studies of stress relaxation in GaAsN and GaP thin films

“…Strain relaxation by plastic deformation occurs by threading dislocations, dislocations along the substrate-film interface, or by twinning [1][2][3][4][5][6][7][8][9]. Relaxation by cracking is commonly observed in highly strained heterostructures [8][9][10][11][12][13][14][15][16]. The relaxation of purely elastic stresses leads to the development of surface undulation [8,9,[17][18][19][20][21][22].…”

“…These mechanisms, which may occur together, exhibit marked anisotropy in some III-V compounds. Wu and Weatherly [15] have studied strain relaxation in InGaP yDeceased 29 April 2003. *Corresponding author.…”