2019
DOI: 10.1002/ppap.201970019
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Cover Picture: Plasma Process. Polym. 9/2019

Abstract: Front Cover: The ability to control individual step parameters in cyclic plasma etch processes provides novel capabilities for nanofabrication. In this example, the pitch of a line/space array is halved as the pattern is transferred into a tantalum nitride (TaN) film. The redeposition of a partially oxidized surface layer creates a self‐aligned mask, and line edge roughness (LER) is maintained by the highly selective nature of the etch. Further details can be found in the article by Nathan Marchack, Keith Hern… Show more

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“…This approach has unique potential to extend the limits of plasma etching. 35) 2.2.5. Self-limiting selective removal by light ion irradiation on Si nitride films.…”
Section: 22mentioning
confidence: 99%
“…This approach has unique potential to extend the limits of plasma etching. 35) 2.2.5. Self-limiting selective removal by light ion irradiation on Si nitride films.…”
Section: 22mentioning
confidence: 99%
“…All present leading‐edge research results on topics from the list above, or related ones. For example, two review papers by Laermer and Urban and Bittner et al deal with MEMS, two others, by Pranda et al and Marchack et al with lithography. The recently emerging fields of atomic layer deposition and etching are also well represented by Kim et al, Dallorto et al, and Leick et al, while packaging, interconnects and yield enhancement are addressed in a review by Miyajima et al, Park et al, Hirata et al, and Eriguchi et al Buschhaus and von Keudell describe the microstructure evolution of SiO 2 films deposited using different plasma sources; finally, Thomas et al present an update on the exciting topic of microscale plasma printing with nano inks, a subject first reviewed in this journal some years ago by the same group.…”
mentioning
confidence: 99%