Coupling effects and channels separation in FinFETs

Dauge, F.; Pretet, J.; Cristoloveanu, S.; Vandooren, A.; Mathew, L.; Jomaah, J.; Nguyen, Bich‐Yen

doi:10.1016/j.sse.2003.09.033

Cited by 84 publications

(35 citation statements)

References 8 publications

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“…4͑b͒, in which the coupling effect on the fully depleted SiNW nFET was considered. 12 Note that no kink was observed with planar SOI nFET as shown in Fig. 2͑b͒, indicating the specific D it distribution at the side surfaces or at the corners that have curved surface of the SiNW channel.…”

mentioning

confidence: 82%

“…Another concern might be that the components A and B affected mutually because of the coupling effects. 12 It has been reported using the electron spin resonance that the trivalent silicon defect at silicon and silicon dioxide interface, which is called P b center, is the origin of the interfacial states. 14,15 Energy-resolved deep level transient spectroscopy is another evaluation method of interfacial states.…”

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confidence: 99%

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Extraction of additional interfacial states of silicon nanowire field-effect transistors

Sato

Kakushima

et al. 2011

Applied Physics Letters

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Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogenic temperatures, where kinks in the drain current becomes prominent. It is found that the kinks can be well-explained assuming local interfacial states near the conduction band (Ec). The main extracted local states have been shown to exist at 10 and 31 meV below Ec with the densities of 1.3×1013 cm−2/eV and 5.4×1012 cm−2/eV, respectively. By comparing two field-effect transistors with different wire widths, the former states can be assigned to the states located at the corner and the side surface of the wire, and the latter to the top and the bottom surfaces.

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mentioning

confidence: 82%

mentioning

confidence: 99%

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Sato

Kakushima

et al. 2011

Applied Physics Letters

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“…The positive trapped oxide charge created in the BOX by the He implants can result in an inversion layer formed along the Si/BOX interface which causes interface coupling effects. [32][33][34] This results in the observed negative shift. The charge density was estimated using analytical expressions of the sub-threshold I d at mid-gap to be 5.0x10 12 cm -2 for both He1 and He2.…”

Section: Nano-scale Silicon On Insulator Fetsmentioning

confidence: 93%

Single Ion Implantation into Si-Based Devices

et al. 2010

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Deterministic doping is crucial for overcoming dopant number variability in present nano-scale devices and for exploiting single atom degrees of freedom. The development of deterministic doping schemes is required. Here, two approaches to the detection of single ion impact events in Si-based devices are reviewed. The first is via specialized PiN structures where ions are directed onto a target area around which a field effect transistor can be formed. The second approach involves monitoring the drain current modulation during ion irradiation. We investigate the detection of both high energy He + and 14 keV P + dopants. The stopping of these ions is dominated by ionization and nuclear collisions, respectively. The optimization of the implant energy for a particular device and post-implantation processing are also briefly considered. IntroductionRandom variations in the number and placement of dopants in classical metal-oxidesemiconductor field-effect-transistors (MOSFETs) are already major issues for CMOS devices operating at room temperature.[1] At 4 K quantum mechanical dependent functionalities have been observed in ultra-scaled MOSFETs with single adventitiously placed dopants. [2][3][4] In these devices the Bohr radius of a dopant atom is a significant fraction of the device size. Deterministic doping technologies aim to mitigate random variations in the doping while also allowing for the controlled fabrication of these ultrascaled devices. In addition, deterministic doping provides significant potential for solidstate quantum computers. [5][6][7][8] For example, the spin-dependent transport between a single 31 P atom and a single electron transistor has been proposed as a sensitive way to detect and control the P atom spin state.[9] Such an architecture requires the precise placement of a single P donor above which a shorted coplanar transmission line is deposited. This transmission line both carries microwave pulses that produce an oscillating magnetic field for local electron spin resonance and a dc bias as recently demonstrated.[10] Single ion implantation and detection has been reported by a number of groups. [11][12][13][14][15][16][17][18][19] These works are compared in Table I. The table shows the energy and type of implanted ion as well as the target type and detection scheme used. Low energy single dopant implantation into both micron-scale and nano-scale devices has been reported (indicated by the bold text in Table I). [11,15,19] Deterministic P implantation was achieved by the detection of the electron-hole (e-h) pairs created by the ion impact with an integrated PiN structure.[11] This scheme has resulted in a device where the timeresolved control and transfer of a single electron between two deterministically implanted P atoms was observed.[20] Other detection schemes are based on ion impact signals from secondary electrons [14,16,18] a These values represent the percentage of the total energy lost to ionization and nuclear recoils, respectively as calculated with SRIM. Additional energy los...

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“…The FinFET technology is enticing because the procedure is accessible to implement with existing processing approaches [3]. The technology consists of developing a slender silicon island (fin) by engraving the silicon film [3].…”

Section: Introductionmentioning

confidence: 99%

32 nm Gate Length FinFET: Impact of Doping

Somra¹,

Sawhney²

2015

IJCA

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FinFET, a self-aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1.5V and T ox =5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm -3 . Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.

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Coupling effects and channels separation in FinFETs

Cited by 84 publications

References 8 publications

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Single Ion Implantation into Si-Based Devices

32 nm Gate Length FinFET: Impact of Doping

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