Extraction of additional interfacial states of silicon nanowire field-effect transistors

Abstract

Interfacial states of silicon nanowire field-effect transistors with rectangular-like cross-sections (wire height of 10 nm and widths of 9 and 18 nm) have been evaluated from the transfer characteristics in the subthreshold region measured at cryogenic temperatures, where kinks in the drain current becomes prominent. It is found that the kinks can be well-explained assuming local interfacial states near the conduction band (Ec). The main extracted local states have been shown to exist at 10 and 31 meV below Ec with the densities of 1.3×1013 cm−2/eV and 5.4×1012 cm−2/eV, respectively. By comparing two field-effect transistors with different wire widths, the former states can be assigned to the states located at the corner and the side surface of the wire, and the latter to the top and the bottom surfaces.

Interface trap density estimation in FinFETs from the subthreshold current

“…In some of these reports analytical models have been used for extracting the Dit in FD-SOI MOSFETs [10], [11]. Also in the field of GAA Si nanowire FETs analytical models have been used with [12], [13] or without [14] the aid of numerical simulation tools.…”

Spatial Distribution of Photocurrent in Si Stripes under Tilted Illumination Measured by Multimode Scanning Probe Microscopy

“…1) As the size of modern devices decreases, the role of structural elements such as edges and corners in carrier accumulation has been increasing. 2) Hence, measurements of photogenerated carrier distribution with high spatial resolution are an important challenge.…”

Advanced Scanning Tunneling Microscopy for Nanoscale Analysis of Semiconductor Devices

“…Photo-carrier generation in semiconductors is a fundamental process utilized in solar cells and photo-detectors. For reduced size of modern detectors, the role of structural elements in carrier accumulation and transport has been increasing [86]. In particular, photocarrier distribution on textured surfaces of Si can be a factor to improve the efficiency of solar cells.…”