Coulomb Forces in the Nuclear<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>1</mml:mn><mml:mi>p</mml:mi></mml:math>Shell

Anderson, R. K.; Wilson, Mark R.; Goldhammer, Paul

doi:10.1103/physrevc.6.136

Cited by 12 publications

(8 citation statements)

References 29 publications

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“…In this simulation, the extension of carrier confinement at the SiO 2 /Si junction was estimated to be ~5 nm. It is important to compute the electric field distribution over the localized high carrier concentration area, allowing the carriers to gain a significant amount of kinetic energy (~0.3 eV) within a scattering mean free path (6-8 nm), satisfying the impact excitation threshold in Si [18,24]. We then analyze the electric field distribution in the electron-rich layer of GOS structure, and calculated the field dependent impact ionization factor for electrons (α n ) and holes (α p ) as a function of distance ( Fig.…”

Section: Research Lettermentioning

confidence: 99%

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Field emission graphene–oxide–silicon field effect based photodetector

Srisonphan

Kanokbannakorn

Teerakawanich

2015

Physica Rapid Research Ltrs

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1 Introduction Carrier multiplication (CM) is an interesting principle for intensifying the solar energy conversion efficiency by converting a single photon into multiple electrons. However, it is known that multiple exciton generation (MEG) is more efficient in a quantum confined system such as a quantum dot, nanocrystals and 2-dimensional based structures rather than bulk silicon [1][2][3][4]. Due to the unique and remarkable 2D physical properties, such as a high transparency to light and exceptional carrier mobility, graphene has received considerable attention for future nanoelectronic and photonic applications [1][2][3][4][5][6][7], and graphene also demonstrates the MEG process [9,10]. Nonetheless, a graphene-based photodetector itself exhibits low quantum efficiency due to its low optical absorption and picosecond recombination time [6,8]. On the other hand, the silicon-based devices have a long lifetime (on

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Section: Research Lettermentioning

confidence: 99%

“…1d) [23]. Carrier multiplication factor (M n ) in this structure was calculated by [21][22][23][24] n n p n 0 0…”

Section: Research Lettermentioning

confidence: 99%

Field emission graphene–oxide–silicon field effect based photodetector

Srisonphan

Kanokbannakorn

Teerakawanich

2015

Physica Rapid Research Ltrs

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“…The maximal occupation of the orbital species designated by Fa will be realized for n = 21. The complete set of states formed as n goes from n = 0 to n = 2 1 totals 2 L C"Cn = 2 2 L TZ=O (5) and hence the irreducible representation of interest in the supergroup must be of degree 22'.…”

Section: (3)mentioning

confidence: 99%

“…We have recently given a n example of their application in Iigand field theory [2] while Anderson, Kumei and Wulfman [3] have used the noncompact conformal group SU (2,2) to describe the properties of symmetric tops, a problem of direct relevance in molecular spectroscopy. Many of the differential equations encountered in quantum chemistry are amenable to attack in terms of Lie's infinitesimal group theory, particularly in view of recent extensions by Bluman [4] and Anderson et al [5]. The use of separable equations in problems such as the hydrogen atom, the asymmetric top, and the H i molecular ion have their origin in the group-subgroup or group-nonsubgroup decompositions of Lie groups in three and four dimensions .…”

Section: Introductionmentioning

confidence: 99%

Lie algebras in quantum chemistry: Symmetrized orbitals

Wybourne

1973

Int J of Quantum Chemistry

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AbstractsThe application of Lie algebras in quantum chemistry is considered. Particular attention is devoted to their application to high symmetry problems especially where icosahedral symmetry prevails. A general programme for implementing the theory of Lie algebras in the analysis of symmetry problems is outlined.On discute l'application des algtbres de Lie dans la chimie quantique. On fait attention surtout 8. leur application aux probltmes de haute symttrie en particulier dans le cas oh la symCtrie icosatdrique est dominante. Un programme gtntral pour rtaliser la thtorie des algtbres de Lie dans l'analyse des probltmes de symttrie a Ctt esquisst.Die Anwendung von Lie-Algebren in der Quantenchemie wird diskutiert. Besondere Aufmerksamkeit wird ihrer Anwendung auf Hochsymmetrieprobleme gewidmet, speziell in Fallen wo ikosaedrische Symmetrie vorherrschend ist. Ein allgemeines Programm fur die Anwendung der Lie-Algebren in der Analyse von Symmetrieproblemen wird skizziert.

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“…Employing conservation of energy and momentum the electron-initiated threshold state in the lowest conduction band of GaAs leading to W, = 1.7 eV is attributed to the (1 10) direction [21]. In GaAs only the central valley and the X-valleys extend to energies beyond the direct band gap what rules out irnpact ionization of carriers in the L-valleys.…”

Section: Calculation Of the Ionization Coefficient And Discussionmentioning

confidence: 99%

New Aspects in the Theory of Impact Ionization

Ziep

Mocker

Keiper

1985

Physica Status Solidi (b)

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on the occasion of his 80th birthdayThe field induced change of the electron states causes avalanche processes already below the usual ionization threshold. For the calculation of the impact ionization coefficient a1 the field influence of the corresponding microscopical rates has to be considered especially below the characteristic threshold energy due to higher occupation numbers. A comparison of the calculated values a1 with experimental data in GaAs raises essential questions concerning the validity of the used stationary transport models.Die feldbedingte Zustandsanderung ruft den Ionisationseffekt schon unterhalb der eigentlichen Schwellenergie hervor. Bei der Berechnung des StoBionisationskoeffizienten a1 ist der FeldeinfluB auf dessen mikroskopische Raten insbesondere unterhalb der charakteristischen Schwellenergie wegen der hoheren Besetzungszahlen zu berucksichtigen. Der Yergleich der berechneten Werte a1 mit experimentellen Daten fur GaAs wirft prinzipielle Fragen der Gultigkeit der verwendeten stationaren Transportmodelle auf.

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Coulomb Forces in the Nuclear1pShell

Cited by 12 publications

References 29 publications

Field emission graphene–oxide–silicon field effect based photodetector

Field emission graphene–oxide–silicon field effect based photodetector

Lie algebras in quantum chemistry: Symmetrized orbitals

New Aspects in the Theory of Impact Ionization

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