Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Baek, Jaewook; Ma, Jie; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

doi:10.1016/j.tsf.2007.03.003

Cited by 20 publications

(9 citation statements)

References 37 publications

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“…Metal-organic chemical vapor deposition (MOCVD) [16], molecular beam epitaxy (MBE) [17], pulsed laser deposition [18], and sputtering [19] are the most common techniques employed for the growth of AlN. Although MOCVD offers the most efficient process due to its ability to deposit high quality materials with significant growth rates, deposition of AlN requires high temperatures (>1000°C) [16].…”

Section: Introductionmentioning

confidence: 99%

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

et al. 2012

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We report on the self-limiting growth and characterization of aluminum nitride (AlN) thin films. AlN films were deposited by plasma-enhanced atomic layer deposition on various substrates using trimethylaluminum (TMA) and ammonia (NH 3 ). At 185°C, deposition rate saturated for TMA and NH 3 doses starting from 0.05 and 40 s, respectively. Saturative surface reactions between TMA and NH 3 resulted in a constant growth rate of~0.86 Å/cycle from 100 to 200°C. Within this temperature range, film thickness increased linearly with the number of deposition cycles. At higher temperatures (≥ 225°C) deposition rate increased with temperature. Chemical composition and bonding states of the films deposited at 185°C were investigated by Xray photoelectron spectroscopy. High resolution Al 2p and N 1s spectra confirmed the presence of AlN with peaks located at 73.02 and 396.07 eV, respectively. Films deposited at 185°C were polycrystalline with a hexagonal wurtzite structure regardless of the substrate selection as determined by grazing incidence X-ray diffraction. High-resolution transmission electron microscopy images of the AlN thin films deposited on Si (100) and glass substrates revealed a microstructure consisting of nanometer sized crystallites. Films exhibited an optical band edge at~5.8 eV and an optical transmittance of > 95% in the visible region of the spectrum.

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Section: Introductionmentioning

confidence: 99%

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

et al. 2012

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“…Growth of AlN films has been performed by various techniques, including molecular beam epitaxy (MBE) [3], metal organic vapor phase epitaxy (MOVPE) [4], hydride vapor phase epitaxy (HVPE) [5], and pulsed laser deposition (PLD) [6]. The substrate temperature in VPE methods is very high (41000 1C) [4].…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

Vashaei

Aikawa

Ohtsuka

et al. 2009

Journal of Crystal Growth

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“…The average size of the crystallites, calculated from (0002) reflection with Scherrer formula, is equal to 42 nm. Moreover, at 2 θ ≈ 38.5° a contribution from (111) Al appears probably due to the low concentration of atomic species N at low pressure .…”

Section: Resultsmentioning

confidence: 99%

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

Dutheil

Orlianges

Crunteanu

et al. 2015

Physica Status Solidi (a)

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Phone: þ33 587 502 331 (0002)-oriented AlN and ZnO thin films are deposited on C-sapphire substrates by pulsed laser deposition at 700 8C. Multilayered structures AlN/ZnO and ZnO/AlN are also grown on C-sapphire and investigated by X-ray diffraction, scanning electron microscopy and transmission measurements. Ellipsometry analysis is employed to investigate the stack of layers and the optical properties of thin films. This non-destructive analysis identified an intermediate layer between AlN and ZnO thin films for AlN/ZnO multilayer which didn't change the crystalline structure or piezoelectric properties of the multilayer. Surface acoustic wave velocities are respectively 5060 m s À1 for AlN and 5350 m s À1 for ZnO. In fact, investigations of surface acoustic wave (SAW) devices revealed a similar resonant frequency for both multilayers and in agreement with those measured for ZnO or AlN thin films.

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Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

Cited by 20 publications

References 37 publications

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition

Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target

AlN, ZnO thin films and AlN/ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave applications

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