Different possible adsorption sites of rubidium atoms on a GaAs(110) surface have been investigated using ab-initio self-consistent Hartree-Fock energy cluster calculations followed by detailed correlation investigations at the level of fourth-order many-body perturbation theory. The Hay-Wadt effective core potentials have been used to represent the cores of the rubidium, gallium and arsenic atoms. We find that the Rb atom adsorption at a site modelled with a RbGa 5 As 4 H 12 cluster is most favoured energetically followed by Rb adsorption at a site modelled with a RbGa 4 As 5 H 12 cluster. Significant charge transfer from the Rb atom to the GaAs surface is also found to occur, with Ga atoms losing charge and As atoms gaining charge. Finally, comparisons are made among different alkali atom adsorptions on the GaAs(110) surface.