Generally, the parameter p • d (pressure × gap distance) in dielectric barrier discharge (DBD) controls the electrical breakdown and also the plasma characteristics. We investigated the optimum plasma transition p • d by controlling the pressure. To find the transition p • d (p • d tr ) condition, optical emission spectroscopy (OES) was used to measure emission spectra from the DBD. All p • d data were normalized by the second positive system of nitrogen molecules, the wavelength of which was 337.1 nm. Then we compared the relative intensities of species generated during the discharge by OES analysis. Species selected for comparison were the first negative system (FNS) of nitrogen molecules (391.4 nm) and atomic oxygen spectra (777.1 nm). Experimental results showed that relative intensities were almost constant as p • d decreased, but at specific p • d data, the intensity started to increase. The increase in FNS of nitrogen molecules means not only an increase in electron energy but also a change in the plasma mode, streamer to glow transition. In the case of DBD using alumina with 1 mm thickness applied ac power, the plasma transition occurred at the 1 Torr cm condition.
The discharge behavior in atmospheric pressure dielectric barrier discharge using ZnO-coated dielectric layer is examined. ZnO thin film on alumina using rf magnetron sputter causes about a factor of a million higher surface conductivity than bare alumina surface. Experimental result shows that discharge uniformity is improved definitely in the case of ZnO-coated dielectric barrier discharge. Increase of surface conductivity stimulates charges to spread over the dielectric surface widely. These charge spreading enhances the uniformity and the stability of atmospheric pressure discharge in open air by initiation of consecutive streamers.
PbPdO 2 is a new class of gapless semiconductors, which is extremely sensitive to external influences such as temperature, magnetic field, and carrier doping, because of their peculiar band structure. With varying temperature, a broad transition from a high-temperature metallic behavior to a low-temperature insulating behavior was observed at TMI=100 K in the electrical resistivity, which is related to the thermally assisted excitation near the Fermi level due to its gapless band structure. By doping 10% Co for Pd in PbPdO2, the number of hole charge carriers was increased by ten times, and the transition temperature was increased to TMI=150 K. When applying a magnetic field, a ferromagnetic component was found at low temperatures in the magnetization curves of both materials, in addition to diamagnetic background signals for PbPdO2 and paramagnetic background signals for PbPd0.9Co0.1O2. In the low temperature regime, the slope of magnetoresistance is negative, while it is changed into positive with a quadratic form at high temperatures. These results of magnetic properties identify a tendency of strong spin-orbit coupling in the gapless semiconducting compounds.
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