Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

Yoo, Young Bum; Park, Jee Ho; Lee, Kuen Ho; Lee, Hyun Woo; Song, Kie Moon; Lee, Se Jong; Baik, Hong Koo

doi:10.1039/c2tc00481j

Cited by 99 publications

(48 citation statements)

References 27 publications

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“…Spin-coating has attracted more and more attention for low cost, simplicity, and high throughput [8]. Metal oxide dielectrics, such as Al 2 O 3 , HfO 2 , and ZrO 2 can be obtained easily by spin-coating [9,10,11]. Meanwhile, it has the potential to realize fully transparent, flexible, and portable electronics [12,13].…”

Section: Introductionmentioning

confidence: 99%

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

et al. 2017

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In this paper, an alumina-zirconia (Al2O3-ZrO2) nanolaminate dielectric was fabricated by spin-coating and the performance was investigated. It was found that the properties of the dielectric can be adjusted by changing the content of Al2O3/ZrO2 in nanolaminates: when the content of Al2O3 was higher than 50%, the properties of nanolaminates, such as the optical energy gap, dielectric strength (Vds), capacitance density, and relative permittivity were relatively stable, while the change of these properties became larger when the content of Al2O3 was less than 50%. With the content of ZrO2 varying from 50% to 100%, the variation of these properties was up to 0.482 eV, 2.12 MV/cm, 135.35 nF/cm2, and 11.64, respectively. Furthermore, it was demonstrated that the dielectric strength of nanolaminates were influenced significantly by the number (n) of bilayers. Every increment of one Al2O3-ZrO2 bilayer will enhance the dielectric strength by around 0.39 MV/cm (Vds ≈ 0.86 + 0.39n). This could be contributed to the amorphous alumina which interrupted the grain boundaries of zirconia.

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Section: Introductionmentioning

confidence: 99%

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

et al. 2017

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“…The breakdown voltage of the MIS capacitor can be appreciated at 36 V, which is due to the dielectric breakdown. The values of current density and capacitor breakdown voltage obtained are reliable for electronic device applications [25,26].…”

Section: Fully Solution-processed Transparent Mis Capacitorsmentioning

confidence: 85%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

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Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

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“…5 shows the capacitance of the HAO film at different frequencies from 1 kHz to 1 MHz. The higher capacitance for the films annealed at 300°C compared with those annealed at 400°C-600°C was attributable to residual polarizable hydroxo groups [29]. Because of these polarizable groups, HAO film annealed at 300°C showed a frequencydependent capacitance in the range of 1 kHz-1 MHz.…”

Section: Effect Of Annealing Temperature On Properties Of Hao Dielmentioning

confidence: 97%

“…7(d), HAO film also existed in amorphous phase, which would be advantageous over a crystalline phase. This may be due to the fact that films in the amorphous phase had lower leakage current and higher breakdown voltage than those in the crystalline phase [29].…”

Section: Electrical Characteristics Of Zito-tftsmentioning

confidence: 97%

Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure

Zhu

Gao

Zhang

2015

IEEE Trans. Electron Devices

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It was demonstrated that low-operating-voltage bottom-gate top-contact (BGTC) structure thin-film transistors (TFTs) were fabricated using solution-processed amorphous zinc indium tin oxide (ZITO) and hafnium aluminum oxide (HAO) films. Due to the excellent chemical stability of ZITO film and high etching selectivity between ZITO and indium tin oxide (or between ZITO and Mo), the manufacture of BGTC structure requires only traditional lithography and wet etching. The usage of high-k HAO films lowered the operating voltage (below 2 V) of the TFT devices. TFT devices based on ZITO and HAO films annealing at 500°C showed a saturated field-effect mobility of 13.5 cm 2 V −1 s −1 , a small subthreshold swing of 87 mV/decade, a large ON-to-OFF current ratio of 7.2 × 10 6 , and a threshold voltage of −0.6 V. The hysteresis (0.14 V) of TFT devices confirmed further that the ZITO and HAO films could be the promising candidates for TFT devices. Index Terms-Bottom gate top contact (BGTC), hafnium aluminum oxide (HAO), low voltage, solution process, thin-film transistors (TFTs), zinc indium tin oxide (ZITO).

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Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

Cited by 99 publications

References 27 publications

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure

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