Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices

Lukas, Sebastian; Kataria, Satender; Prechtl, Maximilian; Hartwig, Oliver; Meledin, Alexander; Mayer, Joachim; Duesberg, Georg S.; Lemme, Max C.

doi:10.1109/drc50226.2020.9135167

Cited by 1 publication

(1 citation statement)

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“…Samples 1 and 2A in particular show variations by many orders of magnitude. [63] The STEM images do not present a full explanation to the variation of the GF. It appears that the GF is influenced by both the total film thickness and the nanocrystalline structure.…”

Section: Device Fabrication and Characterizationmentioning

confidence: 99%

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Lukas

Hartwig

Prechtl

et al. 2021

Adv Funct Materials

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Platinum diselenide (PtSe 2 ) is a 2D material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner, which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, the nanocrystalline structure of different PtSe 2 thin films grown by thermally assisted conversion (TAC) is investigated and is correlated with their electronic and piezoresistive properties. Scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification are used. Electronic devices are fabricated using transferred PtSe 2 films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. The findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe 2 toward numerous applications.

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Section: Device Fabrication and Characterizationmentioning

confidence: 99%