Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

“…The barrier height that we found at room temperature for the ZnO/p-Si is small than 0.87 eV reported by Siad et al [38]. On the other hand, Lee et al [39] Norde's method is an alternative method which could also be used to estimate the barrier height of the device.…”

Studies on electrical and the dielectric properties in MS structures

“…Also, the changes in frequency have an important effect on determination of the M-S structures [17,19]. The voltage and frequency dependence of series resistance (R S ) at metal-semiconductor structures play an important role in the determination of the main parameters of the devices [9,[20][21][22]. When voltage is applied across the M-S structure, the combination of the interfacial insulator layer, depletion layer and the series resistance of the device will share applied voltage.…”

The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

“…The interface states (N ss ) and series resistance (R s ) of a metal-semiconductor (MS), metal-insulator-semiconductor (MIS) or metal-oxide-semiconductor (MOS) structures are important parameters that affect their main electrical parameters [1][2][3][4][5][6][7]. In fact the density of interface states of MIS diode is less compared to MS diode.…”