Conversion of silicon nitride into silicon dioxide through the influence of oxygen

Fränz, I.; Langheinrich, W.

doi:10.1016/0038-1101(71)90060-8

Cited by 64 publications

(16 citation statements)

References 11 publications

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“…The surface-passivating layer is fabricated with silicon oxide (SiO 2 ) which is used to passivate the surface. By applying only O 2 gas, SiO 2 layer can be grown upon Si 3 N 4 layer [31]. As Si 3 N 4 ARC shows the highest efficiency (discussed in"Effects of ARC " section), in this work, surface-passivated layer that is a simulation of SiO 2 layer upon Si 3 N 4 ARC layer has been done.…”

Section: Simulation With Different Arcsmentioning

confidence: 99%

Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

et al. 2018

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In this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC1D simulation software. Simulation shows that the range of 500-700 nm would be suitable for designing an ARC. Designing a single-layer silicon nitride (Si 3 N 4) ARC for 600 nm wavelength and with a thickness of 74.257 nm, a silicon solar cell with 20.35% efficiency has been simulated. Very closely followed by a 20.34% efficient silicon solar cell with 74.87 nm thick zinc oxide (ZnO) ARC layer. Significant increase in efficiency has been observed by applying ARC in respect to not applying any kind of ARC. After efficient solar cell modeling, optimum efficiency of 20.67% is being achieved by using SiO 2 surface passivation and Si 3 N 4 ARC layer. The effects on voltage, current, photovoltaic efficiency, reflectivity and external quantum efficiency due to ARCs are also represented in this work.

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Section: Simulation With Different Arcsmentioning

confidence: 99%

Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

et al. 2018

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“…Annealing in oxygen appreciably reduced the flat band voltage, U,. 2. Oxidation resulted in a considerable increase of hysteresis in the Si-Si3N4 structure ( 4 U ) .…”

Section: Data Of C-kt Measurementsmentioning

confidence: 99%

The structure of silicon nitride films. III. Oxidation of Silicon Nitride — Defects

Edelman

1979

Phys. Stat. Sol. (a)

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“…12 In comparison to the thermal oxidation of silicon, the oxidation rate of silicon nitride is much lower and the activation energy for silicon oxide formation is higher. The annealing of silicon nitride layer in the presence of oxidizing agent forms a silicon oxide layer, while silicon nitride is consumed.…”

Section: Introductionmentioning

confidence: 99%

“…12 In comparison to the thermal oxidation of silicon, the oxidation rate of silicon nitride is much lower and the activation energy for silicon oxide formation is higher. 12,18 The rate of thermal dry oxidation of silicon nitride films is influenced by the presence of hydrogen in the silicon nitride films. [13][14][15][16][17] The silicon oxynitride intermediate layer, which is formed in between the silicon nitride and the external silicon oxide layers, is responsible for the superior oxidation resistance of silicon nitride.…”

Section: Introductionmentioning

confidence: 99%

Chemical bonding and interdiffusion in scaled down SiO2∕Si3N4∕SiO2 stacks with top oxide formed by thermal ed copyoxidation

Saraf¹,

Edrei²,

Akhvlediani³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inWet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks Appl. Phys. Lett. 90, 263513 (2007); 10.1063/1.2752769 Effect of oxidation on the chemical bonding structure of PECVD SiN x thin films Hafnium interdiffusion studies from hafnium silicate into siliconThe influence of thermal oxidation on the composition of silicon nitride films in SiO 2 /Si 3 N 4 / SiO 2 stacks for advanced nonvolatile memories is reported. X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry analyses lead to the conclusion that wet thermal ͑pyrogenic͒ oxidation of silicon nitride enhances the incorporation of oxygen into the silicon nitride layer and creates a silicon oxynitride layer. In the oxynitride layer formed by wet oxidation, O is mostly bonded to N, whereas in the native oxynitride at the silicon nitride surface, O is preferentially bonded to Si. Dry oxidation ͑1200°C͒ results in an even higher amount of oxygen incorporation into the silicon nitride layer as compared with the pyrogenic process. After both pyrogenic and dry oxidation, hydrogen concentration decreases in the bulk of the silicon nitride layer. Following wet oxidation, hydrogen was found to accumulate at the surface layers of the grown oxynitride film. Oxygen penetration into the nitride layer was found to be higher in thinner nitride layers. The peculiarities of hydrogen distribution were not affected by the thickness of the nitride layer.

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Conversion of silicon nitride into silicon dioxide through the influence of oxygen

Cited by 64 publications

References 11 publications

Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

Investigation of the impact of different ARC layers using PC1D simulation: application to crystalline silicon solar cells

The structure of silicon nitride films. III. Oxidation of Silicon Nitride — Defects

Chemical bonding and interdiffusion in scaled down SiO2∕Si3N4∕SiO2 stacks with top oxide formed by thermal ed copyoxidation

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