Controlling the intermediate conductance states in RRAM devices for synaptic applications

García, Héctor; Ossorio, Óscar G.; Dueñas, S.; Castán, Helena

doi:10.1016/j.mee.2019.110984

Cited by 17 publications

(11 citation statements)

References 18 publications

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“…When using voltage pulses, simulations demonstrated the final conductance value has a strong relationship with the pulse length [17]. We observed a higher number of pulses was required to reach the same final synaptic weight when applying voltage pulses, giving place to an accumulative process, although the potentiation characteristic obtained was not linear [9]. In order to check this behavior for current pulses, we applied three series of 50 pulses with different pulse lengths, from 1 µs to 50 µs, increasing the amplitude from 0 mA to 5.8 mA.…”

Section: Resultsmentioning

confidence: 78%

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Current Pulses to Control the Conductance in RRAM Devices

García

Dueñas

Ossorio

et al. 2020

IEEE J. Electron Devices Soc.

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Due to the high number of reachable conductance levels in resistive switching devices, they are good candidates to implement artificial synaptic devices. In this work, we have studied the control of the intermediate conductance levels in HfO 2-based MIM capacitors using current pulses. The set transition can be controlled in a linear way using this kind of signal. The potentiation characteristic is not affected by the pulse length due to the filament formation takes place in very short times. This behavior does not allow using identical pulses to obtain the potentiation characteristic. The transient response of the devices when applying current pulses showed the filament formation is characterized by a peak in the voltage transient signal. No depression characteristic can be obtained using current signals due to the abrupt reset transition. However, the depression characteristic can be obtained using voltage pulses, so combining both signals should allow control the synaptic weight in an appropriate way.

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Section: Resultsmentioning

confidence: 78%

“…In a previous work, we studied the control of the conductance states in HfO 2 -based metal-insulator-metal (MIM) capacitors applying voltage pulses [9]. We obtained linear depression characteristics, but a non-linear potentiation characteristic due to the abrupt set transition.…”

Section: Introductionmentioning

confidence: 98%

Current Pulses to Control the Conductance in RRAM Devices

García

Dueñas

Ossorio

et al. 2020

IEEE J. Electron Devices Soc.

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“…The depression characteristic (the LRS to the HRS transition) cannot be controlled by varying the maximum negative current applied due to the abrupt LRS to HRS transition. However, the depression characteristic is the one better controlled by applying voltage instead of current signals to the sample [7].…”

Section: Resultsmentioning

confidence: 99%

“…In a previous work, we studied the control of the intermediate conductance states in hafnium oxide (HfO2) based metalinsulator-metal (MIM) capacitors, by applying voltage pulses [7]. In the case of the potentiation characteristic, we obtained a bad behavior due to the abrupt set characteristic.…”

Section: Introductionmentioning

confidence: 98%

Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

García

Ossorio

Dueñas

et al. 2020

2020 IEEE Latin America Electron Devices Conference (LAEDC)

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Artificial synaptic devices used in neuromorphic systems need a high number of reachable conductance levels. Resistive switching devices are promising candidates to implement these devices due to their reachable conductance levels. In this work, we have used TiN/Ti/HfO2/W capacitors to study the control of the intermediate conductance states using current pulses instead of the usual voltage pulses. Unlike the use of voltage pulses, in this case we can control the HRS to LRS transition (potentiation characteristic). The characteristic is clearly linear when applying current pulses with linearly increasing amplitudes. The potentiation characteristic is not affected by the pulse length, even for lengths lower than 1 μs. In terms of peripheral circuitry, it is desirable to use pulses with identical amplitudes, but in this case no accumulative behavior is observed, and one current pulse is enough to carry the device to the final conductance state achieved for the amplitude used. Finally, it is not possible to control the HRS to LRS transition (depression characteristic) using current pulses due to the abrupt reset transition. However, this transition can be well controlled using voltage pulses.

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“…In a previous work [3] we show that TiN/Ti/ HfO2/W capacitors exhibit resistive switching behavior and that intermediate conductance states can be obtained by varying the voltage applied to the device (Voltage-control mode, VCM). We demonstrated that the conductance values vary near linearly when applying voltage depression pulses.…”

Section: Introductionmentioning

confidence: 92%

(Invited) Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications

García¹,

Ossorio²,

Dueñas³

et al. 2020

Meet. Abstr.

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The control of the intermediate conductance levels in HfO2-based MIM capacitors for neuromorphic applications is presented in this work. Using voltage or current control signals shows significant differences. The potentiation levels can be controlled in a linear way using current as control signal. These levels are achieved in very short times and only depends on the current pulse amplitude magnitude. On the contrary, depression levels cannot be controlled by current but with voltage pulses. A proper control of synaptic behavior requires the combination of both types of signals.

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Controlling the intermediate conductance states in RRAM devices for synaptic applications

Cited by 17 publications

References 18 publications

Current Pulses to Control the Conductance in RRAM Devices

Current Pulses to Control the Conductance in RRAM Devices

Using current pulses to control the intermediate conductance states in hafnium oxide-based RRAM devices

(Invited) Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications

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