2022
DOI: 10.1007/s11664-022-10066-2
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Controlling of Hysteresis by Varying ZnO-Nanoparticles Amount in P3HT:ZnO Hybrid Thin-Film Transistor: Modeling

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Cited by 8 publications
(5 citation statements)
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“…We attribute this to the capability of designing ultra‐low threshold voltage OFET, as previously reported in References 16–18. In addition, the previous investigation recorded a very acceptable and controllable on/off current ratio and subthreshold swing (SS) 19–22 . In such a context, selecting the primary active OSC material, the device dimension, and the doping level is the critical design parameters for the OFETs 23 .…”
Section: Introductionsupporting
confidence: 54%
See 1 more Smart Citation
“…We attribute this to the capability of designing ultra‐low threshold voltage OFET, as previously reported in References 16–18. In addition, the previous investigation recorded a very acceptable and controllable on/off current ratio and subthreshold swing (SS) 19–22 . In such a context, selecting the primary active OSC material, the device dimension, and the doping level is the critical design parameters for the OFETs 23 .…”
Section: Introductionsupporting
confidence: 54%
“…In addition, the previous investigation recorded a very acceptable and controllable on/off current ratio and subthreshold swing (SS). [19][20][21][22] In such a context, selecting the primary active OSC material, the device dimension, and the doping level is the critical design parameters for the OFETs. 23 Moreover, the OFET architecture, based on the gate and the contact arrangement, can influence the overall device I-V transfer characteristics.…”
Section: Introductionmentioning
confidence: 99%
“…An important device in this technology is the organic thin-film transistor (OTFT) which inherits the advantages of its intrinsic material, such as mechanical flexibility and low-cost solution processability [1][2][3][4][5][6][7]. Different OTFTs are fabricated accordingly in order to adapt to current requirements in non-volatile memory applications [8]. In particular, these transistors are present in several types of non-volatile memories, such as the organic phase-change memory transistors (OPCMTs) [9], transistor-based organic flash memories [5,10], organic resistive random-access memories (RRAMs) [11][12][13], organic ferroelectric field-effect-transistors [14][15][16][17], and magnetoresistive random-access memory (MRAM) [18].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, it exhibits a substantial exciton binding energy, measuring 60 meV at ambient temperature [1][2][3]. These distinctive attributes render ZnO suitable for a wide array of technological applications, encompassing gas detection sensors [4], photodetection devices [5], dyebased solar cells [6], transparent electrical conductors [7], devices that exploit piezoelectric effects [8], highcapacity electronic systems [9], thin-film transistor technology [10], light-emitting applications [11], and various solar cell configurations [12].…”
Section: Introductionmentioning
confidence: 99%
“…Similarly, the sol-gel process has demonstrated its efficacy in producing ZnO NRs, yielding products of high purity, uniformity, and crystalline quality [25]. Vapor deposition techniques, including chemical vapor deposition (CVD) [10] and physical vapor deposition (PVD) [26,27], have also been employed to synthesize ZnO NRs with controlled and superior characteristics. These methods, however, are often constrained by the necessity for hazardous and costly chemicals, elevated temperatures, and intricate equipment, restricting their broader application.…”
Section: Introductionmentioning
confidence: 99%