Controlled Growth of Long GaN Nanowires from Catalyst Patterns Fabricated by “Dip-Pen” Nanolithographic Techniques

Li, Jianye; Lu, Chenguang; Maynor, Benjamin W.; Huang, Shaoming; Liu, Jie

doi:10.1021/cm0344764

Cited by 62 publications

(60 citation statements)

References 25 publications

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“…16,18,19 The metal catalysts were patterned by lithography methods. In this way, the GaN nanorod growth is position controlled due to the lateral patterning of the metal catalyst.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

“…However, the orientation and the number of GaN nanorods grown on one metal catalyst site needs to be further controlled. 16,19 Although GaN nanorods can be obtained via a VLS growth mode, nanorods often differ in their crystal orientations and in their tendency to tilt, twist, intersect, and branch during growth. Single GaN nanorod based LEDs fabricated by VLS growth were successfully demonstrated using focus ion beam etching for contact preparation.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…16,18,19 The metal catalysts were patterned by lithography methods. In this way, the GaN nanorod growth is position controlled due to the lateral patterning of the metal catalyst.…”

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

Section: Self-organized Growth Of Gan Nanorodsmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

490

394

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“…Positional control of GaN NW growth has been achieved by a dip-pen method. 16 Patterned growth of other nanostructures utilizing FIB was demonstrated using Ga + ion implanted substrates or Ga + I-beam milled masks. 17,18 Another alternative is positional control of NW growth by FIB-Pt patterning of nanoscale catalyst islands, or dots.…”

Section: Postprint Version Published In Applied Physicsmentioning

confidence: 99%

Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth

Nam

Kim

Fischer

2005

Applied Physics Letters

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Nanopatterned Pt by Ga + focused ion beam (FIB) decomposition of an organometallic precursor forms low resistance ohmic contacts on 40-70 nm diameter GaN nanowires (NWs) grown by thermal reaction of Ga 2 O 3 and NH 3 . With no intentional doping, the wires are presumed to be n-type. Thus, the linear I-V behavior is surprising since evaporated Pt usually forms Schottky barriers on n-GaN. Ohmic behavior was not obtained for 130-140 diameter wires, even with thicker Pt contacts. A second application of FIB Pt nanopatterning was demonstrated by position-selective growth of GaN NWs on Pt catalyst dots. NW locations and density are defined by the position, size, and thickness of the Pt deposit. Combining these techniques provides a versatile platform for nanostructure research and development. Letters, Volume 86, Article 193112, 2005, 3 Achieving reliable low resistance ohmic contacts to GaN is not trivial. High contact resistance often degrades the performance of GaN-based devices. 1 Low resistance ohmic contacts to n-type GaN are generally obtained by Ti deposition and conventional lithography. Similar metals and methods have been applied to GaN NWs, 2,3 but these require a tedious sequence of locating NWs on a substrate by atomic force microscopy (AFM), defining a contact pattern with e-beam lithography, metal deposition and removal of e-beam resist. In addition, achieving robust ohmic contacts requires work function tuning and deposition of an adhesion layer to insure mechanical stability. Attracted by its convenience and versatility, several groups reported the use of direct Pt deposition by focused ion beam (FIB) to make metal contacts on Bi and Ag NWs 4,5 and carbon nanotubes 5 . This is done by locally decomposing a fine jet of organometallic vapor with the highly focused and spatially controlled Ga + ion beam (I-beam). 5 Since most FIB systems are also equipped with high resolution scanning electron microscopy (SEM), the combination provides unique capabilities of fast and precise metal contact patterning. Here we demonstrate direct FIB nanopatterning of low resistance ohmic Pt contacts on n-type GaN NWs grown by Ga 2 O 3 -NH 3 reaction without intentional doping. It is surprising for FIB patterned Pt to form low resistance ohmic contacts on n-type GaN since Pt generally forms a Schottky barrier on n-type GaN. 6 In the second part of this letter we exploit the same spatial selectivity to create patterned Pt nano-catalysts, which constrain GaN NW nucleation to these small selected regions. Comments Postprint version. Published in Applied PhysicsThe details of GaN NW synthesis are described in a previous report. 7 We used sputter-deposited Au/Pd catalyst layers on Si substrates. Two different layer thicknesses yielded two different NW diameters, i.e. 40-70 nm and 130-140 nm, with which we could study the effect of NW diameter on I-V characteristics. NWs were then transferred to 200 nm SiO x on Si chips with Cr/Au (10 µm/50 µm) contact pads predeposited by e-beam lithography and thermal evaporation. Th...

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“…We introduced a new Ge 98 Dy 2 semiconductor nanowire material, and discussed its fabrication and influencing instruments on the nanoscale, considering possibilities to use similar highly doped Ge-based nanowires as room temperature magnetic semiconductors and magnetic nanodevices. The last aspect will complement partially achieved goals to orient a nanowire in a desired direction [7,14]. A single magnetic nanowire will be easily directed in a relatively small switchable magnetic field in an appropriate environment; analogously, a dielectric nanowire -in an electric field.…”

Section: Organization Of Matter In a Tube Reactormentioning

confidence: 92%

“…in the case of perpendicularly magnetized Co/Pt [4] or Fe/Pt [5] patterned surfaces, organized Fe 3 O 4 particles will add to the inherent magnetic properties of the substrate. In another instance, entrenched and organized nanowires in antidots [6] will lead to in-situ fabrication of nano-devices with targeted properties [7].…”

Section: Introductionmentioning

confidence: 99%

Organization of matter into one-dimensional units on designed media

Paul

2011

Open Physics

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Abstract:The organization of magnetic materials into one-dimensional micro-and nanowires on designed media is discussed, exemplified by two experiments on the microscale and nanoscale, with regard to particles as basic building blocks for the growth and development of matter. In the first organizational experiments, cobalt (Co) micro-particles are assembled on patterned media with perpendicular magnetization by acoustic vibrations onto designed shapes reflecting macroscopically the parent material. In the second experiments, semiconductor Germanium-Dysprosium (Ge 98 Dy 2 ) matter is assembled on gold (Au) catalytic nuclei in a tube reactor by physical vapor transport as clusters of nanowires. The underlying mechanisms of organization are described, and similarities and distinctive features in the processes are discussed. The role of the energy-input in the form of mechanical vibrations and heat is outlined with its similar impact on the assembly and growth of matter on surfaces. The description of these experiments in view of organization allows more control over the processes of planned arrangement on designed media. Routes for further progress in this direction are briefly outlined. PACS

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Controlled Growth of Long GaN Nanowires from Catalyst Patterns Fabricated by “Dip-Pen” Nanolithographic Techniques

Cited by 62 publications

References 25 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

Focused-ion-beam platinum nanopatterning for GaN nanowires: Ohmic contacts and patterned growth

Organization of matter into one-dimensional units on designed media

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