Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

Aggarwal, V.; Ch, Ramesh; Tyagi, Prashant; Gautam, Sudhanshu; Sharma, Alka; Husale, Sudhir; Kumar, Manoj; Kushvaha, S. S.

doi:10.1016/j.mssp.2020.105631

Cited by 14 publications

(19 citation statements)

References 31 publications

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“…Alternatively, non-polar a-plane sapphire substrate was utilized to grow c-plane GaN. The main interest of the aforementioned substrate was due to the minimal lattice mismatch between c-plane GaN grown on a-plane sapphire substrate, leading to the production of nano-porous (NP)-and nano-column (NC)-GaN features on sapphire (1120) substrate [56].…”

Section: A-plane Sapphire Substratementioning

confidence: 99%

“…The designs of the photodetectors were categorized into four types of geometry, namely, MSM semiconductor, p-n junction, p-i-n junction, and hybrid-type geometry, as shown in Figure 4 [1,[52][53][54]. Due to its straightforward process, MSM geometry has been considered a popular geometry choice, especially in UV photodetectors that are fabricated on epitaxial GaN nanostructures [56]. MSM UV photodetectors were fabricated by depositing platinum (Pt) metal electrodes with a separation of 200 μm on GaN film.…”

Section: Photodetector Geometry and Metal Contactsmentioning

confidence: 99%

“…Another simple yet remarkable approach using a non-conventional direction along the nonpolar a-direction was the effect of consuming a highly related indium content [53]. The Due to its straightforward process, MSM geometry has been considered a popular geometry choice, especially in UV photodetectors that are fabricated on epitaxial GaN nanostructures [56]. MSM UV photodetectors were fabricated by depositing platinum (Pt) metal electrodes with a separation of 200 µm on GaN film.…”

Section: Photodetector Geometry and Metal Contactsmentioning

confidence: 99%

“…The use of lasers has been reported with molecular beam epitaxy (MBE) for the epitaxial growth of GaN film and NP-and NC-GaN on sapphire (1120) substrate [56]. They reported that the desired layer geometry could be achieved by tuning the buffer layer condition.…”

Section: Laser Molecule Beam Epitaxymentioning

confidence: 99%

“…The I-V characteristics were plotted for sweep bias from −1 V to 1 V for the samples, wherein all samples portrayed a proper response to UVA (364 nm) light. The exact values of the rise and fall time were not clearly reported, whereas the response time was in the sub-second range and the recovery time was <2 s. In addition, the responsivity towards the epitaxial growth of the GaN nanostructure was studied for photodetector applications [56]. Three devices were fabricated, and it was revealed that the non-polar GaN-based MSM photodetector had a photo-response of ~358 mA/W at an applied bias of 1 V. It was suggested that the photo-responsivity of the non-polar GaN-based MSM photodetector was higher than that of GaN film (~36 mA/W) and NC-GaN (~7 mA/W).…”

Section: Responsivitymentioning

confidence: 99%

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Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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Section: A-plane Sapphire Substratementioning

confidence: 99%

Section: Photodetector Geometry and Metal Contactsmentioning

confidence: 99%

Section: Photodetector Geometry and Metal Contactsmentioning

confidence: 99%

Section: Laser Molecule Beam Epitaxymentioning

confidence: 99%

Section: Responsivitymentioning

confidence: 99%

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Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

Um,

Chandran,

Kim

et al. 2023

Adv Funct Materials

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GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of their low operating voltage, small volume, long lifetime, high‐temperature resistance, and low energy consumption. However, there are still fundamental issues to be overcome, and the most important issue is to get a photoconductive gain. In this paper, the following new approaches are provided to innovatively improve the photoconductive gain of UV PDs in GaN‐based materials. First, the aspect ratio of the 1D GaN microwire (MW) structure is dramatically improved by analyzing the pulse growth mechanism using the metal‐organic vapor deposition system. Second, the comprehensive strain behavior in the MW epitaxial growth system is successfully analyzed. Third, the fabricated metal‐semiconductor‐metal‐based MW UV PD shows photoresponsivity and sensitivity of 28.365 A W−1 and 93.16%, respectively, at the −2 V bias, which significantly outperforms the conventional structures in the UV region. Finally, a trap‐assisted Poole–Frenkel effect‐based energy bandgap mechanism, that allows the defect level formed by lattice mismatch between the substrate and GaN to be used as an electron carrier path, is newly defined. This study will present the direction of future UV PDs by providing a new MW structure based on GaN materials, a third‐generation semiconductor.

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Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

Aggarwal

Varshney

et al. 2022

Appl. Phys. A

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Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

Cited by 14 publications

References 31 publications

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

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