Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

“…The QD density depends on several growth parameters, such as InAs coverage [5,6,10], InAs growth rate [5,7], As-flux [3,8] and substrate temperature [2,3,9]. The QD density variation observed in our samples could thus in principle be caused by variation in any of these parameters across the wafer.…”

“…This causes nucleation of more QDs and the QD density increases [2]. Too low substrate temperature will cause the formation of large QDs [9]. The density of these large QDs, as well as the total QD density, is therefore expected to be higher in areas with lower growth temperature.…”

“…Earlier works have shown how the MBE growth parameters strongly influence the quantum dot properties, see e.g. [2][3][4][5][6][7][8][9][10][11].…”

Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy

“…1(b). In our previous work [7], the QD size, especially the QD height, is increased by capping the InAs QDs with the InGaAs overgrowth layer, in which the modification in a QD can be attributed to the local directional migration of Ga and In adatoms around the InAs QD and the suppression of In segregation changing the compositional mixing, because In already exists in the InGaAs layer, when depositing an InGaAs layer on an InAs QD layer [7][8][9]. Therefore, the red-shift in the PL peak position from the reference QD1 sample in this work are mainly due to an increase in a QD size and the low potential barrier of the In 0.15 Ga 0.85 As layer [7,10,11].…”

Features of the electronic spectrum in a type-I core – shell quantum dot

“…First of all, these are nanocrystals in glasses and wideband dielectric matrices [4]. Another important type of quantum dots is so-called self-assembled quantum dots, which are grown by using the Volmer - Weber and Stranski - Krastanov techniques with the help of the methods of molecular beam and vapour-phase epitaxy [5]. This type of quantum dots is studied in many experimental and theoretical papers [6,7].…”