Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors

Ishiguro, Mami; Ikeda, Kazuya; Mizuno, Megumi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

doi:10.7567/jjap.52.08jf02

Cited by 18 publications

(11 citation statements)

References 27 publications

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“…The conduction band of AlGaN is lifted up and that of the GaN channel is flattened due to the presence of the built-in electric field in the p (p-GaN)-n (i-GaN) junction, as shown in Figure 2c. As a result, the conduction channel is closed, and the device can maintain a very low drain current in the dark, 17 which is the same as the OFF state for a normally off HEMT. 18 Figure 2d displays the simulated electron concentration distribution under UV illumination.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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We report high-performance visible-blind ultraviolet (UV) phototransistors (PTs) based on an enhanced HEMT structure. In dark conditions, the conduction channel was depleted, and the dark current density was suppressed to 2.63 × 10 −10 mA/mm. Under 345 nm UV illumination, the depletion region shrinks, and the two-dimensional electron gas (2DEG) recovers. A high photocurrent density of 37.39 mA/mm, a peak responsivity of 6.80 × 10 4 A/W, a large photo-to-darkcurrent ratio (PDCR) of 1.42 × 10 11 , and a superior UV-to-visible rejection ratio (UVRR) of 4.84 × 10 7 are exhibited. Most importantly, the device presents an ultrafast response time of 11.33 μs/65.52 μs, which is due to the significant suppression of the persistent photoconductivity effect by the built-in electric field in the p−n junction. The results suggest that the p-GaN/AlGaN/GaN PT is a brand-new device model that combines the advantages of photoconductors with high responsivity and photodiodes with low dark current and fast response time.

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Section: ■ Results and Discussionmentioning

confidence: 99%

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Wang

You

et al. 2022

ACS Photonics

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“…Nitride semiconductor-based devices, such as GaN, are sensitive only in the UV range due to their wide bandgap and are also tunable by designing the bandgap by alloying. 3,4) UV to visible light rejection ratio is sufficiently high, steeply changing the absorption coefficient at the absorption edge due to its direct bandgap. 5) Moreover, it can operate at as high temperatures as 1000 °C.…”

Section: Introductionmentioning

confidence: 99%

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

Miyata

Hoshii

Wakabayashi

et al. 2022

Jpn. J. Appl. Phys.

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Photodetectors based on AlGaN/GaN HEMT on Si have a long decay time after removal of light irradiation because of the large number of defects. This behavior is unsuitable for application which require fast response. In several papers, though decay time was suppressed by thermal heating, it has problems such as fabrication complexity and power consumption. In this paper, we propose a substrate voltage (V sub) application method for suppressing decay time, which modulate the V sub immediately after the removal of UV irradiation, which promotes injecting electrons from 2DEG to C-GaN layer. The decay time was suppressed from 75 s to 2 s. Moreover, effectiveness of reset voltage application is confirmed by demonstration which changing the UV intensity continuously.

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“…[15][16][17][18][19][20] Thus far, we have reported high photosensitivity AlGaN/GaN heterostructure field effect transistor (HFET) type photosensors with p-type GaN optical gate, AlGaN/GaN HFET type photosensor with p-type GaInN optical gate, AlGaN/AlGaN HFET type photosensor with p-type GaN optical gate, and AlGaN/ AlGaN HFET type photosensor with Schottky electrode gate, respectively. [21][22][23][24][25][26][27][28][29] Since these HFET type photosensors have two-dimensional electron gas (2DEG) with high mobility, a large gain is obtained and as a result high photosensitivity is realized. By using p-type GaN or Schottky electrode, it is possible to expect a low dark current by forming a depletion layer, resulting in high rejection ratio as a result.…”

mentioning

confidence: 99%

“…[27][28][29] We also reported the result of applying this device structure to photosensor with photosensitivity in visible light region. 25,26) In these reports, the photosensors with photosensitivity of 4 × 10 5 A W −1 at approximately 380 nm, rejection ratio of 17, and absorption wavelength edge of 450 nm were realized by using p-type GaInN gate. However, the photosensitivity is almost the value of GaN, it has serious problems that the low S/N ratio and the wavelength range required for visible light communication have not been reached.…”

mentioning

confidence: 99%

High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors

Sakata

Iwaya

Takeuchi

et al. 2019

Jpn. J. Appl. Phys.

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We realized the high-performance AlGaN/GaInN/GaN-based heterostructure field-effect transistor type visible photosensors with high photosensitivity and high rejection ratio. We designed the photosensors including two-dimentional electron gas layer at AlGaN/GaInN/GaN hetero-interface to detect visible light with high photosensitivity. Also, carrier depletion using p-type GaN gate was applied for reduction of the dark current. Furthermore, we realized photosensor with externally low dark current density by applying a C-doped GaN layer as an underlying layer. We found that inserting an unintentionally doped GaN interlayer between the GaInN active layer and the C-doped GaN underlying layer is important for realizing a high-performance photosensors. By employing these device designs, a high photosensitivity of 104 A W−1 at wavelength of 430 nm and high rejection ratio of more than 106 were realized under the irradiation of 100 μW cm−2. The absorption edge wavelength was approximately 480 nm corresponding to the bandgap energy of GaInN active layer. Therefore, this device structure is useful as the visible photosensor with high sensitivity and high rejection ratio.

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Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors

Cited by 18 publications

References 27 publications

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

High photosensitivity AlGaN/GaInN/GaN heterojunction field-effect transistor type visible photosensors

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