Abstract:We realized the high-performance AlGaN/GaInN/GaN-based heterostructure field-effect transistor type visible photosensors with high photosensitivity and high rejection ratio. We designed the photosensors including two-dimentional electron gas layer at AlGaN/GaInN/GaN hetero-interface to detect visible light with high photosensitivity. Also, carrier depletion using p-type GaN gate was applied for reduction of the dark current. Furthermore, we realized photosensor with externally low dark current density by apply… Show more
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