Control of Short-Channel Effects in GaN/AlGaN HFETs

Uren, Michael J.; Hayes, D.G.; Balmer, R.S.; Wallis, D. J.; Hilton, K.P.; Maclean, J.O.; Martin, Trevor; Roff, C.; McGovern, P.; Benedikt, J.; Tasker, P.J.

doi:10.1109/emicc.2006.282751

Cited by 33 publications

(23 citation statements)

References 9 publications

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“…The process has been described elsewhere [23]. The layer structure consisted of a 25nm thick undoped Al 0.25 Ga 0.75 N barrier layer, on a 1.9 µm GaN buffer which was Fe doped to control short-channel effects [24]. A 4H semi-insulating SiC substrate was used for optimum thermal performance.…”

Section: Measurement Setupmentioning

confidence: 99%

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Roff

Benedikt

Tasker

et al. 2009

IEEE Trans. Electron Devices

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Section: Measurement Setupmentioning

confidence: 99%

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Roff

Benedikt

Tasker

et al. 2009

IEEE Trans. Electron Devices

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“…Consequently, reliability evaluation should include RF accelerated testing as an essential part: RF operation can indeed induce failure modes and mechanisms that are not observed during DC or thermal storage tests [1]. Manuscript Among the key technological aspects of GaN HEMTs, the compensation of the unintentional n-type conductivity of the GaN buffer layers (e.g., by means of iron or carbon doping) is of essential importance for the optimization of the 2DEG carrier confinement, the substrate insulation, and the control of the short-channel effects [2]- [4].…”

Section: Introductionmentioning

confidence: 99%

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Bisi

Chini

Soci

et al. 2015

IEEE Electron Device Lett.

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Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including unintentional doping, carbon doping and iron doping. No signature of gate-edge degradation has been found, and good correlation emerges between the buffer composition, subthreshold leakage current, and permanent degradation of the RF performance. The degradation mechanism, more pronounced in devices with parasitic buffer conductivity, involves the generation of additional deep trap states, the worsening of the dynamic current collapse, and the subsequent degradation of RF output power

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“…buffer leakage, and short-channel effects [3]. Buffer isolation can be achieved using intrinsic growth defects to form deep donors and acceptors [4].…”

mentioning

confidence: 99%

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Gustafsson

Chen

Bergsten

et al. 2015

IEEE Trans. Electron Devices

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Aluminium gallium nitride (AlGaN)/GaN high-electron mobility transistor performance is to a large extent affected by the buffer design, which, in this paper, is varied using different levels of carbon incorporation. Three epitaxial structures have been fabricated: 1) two with uniform carbon doping profile but different carbon concentration and 2) one with a stepped doping profile. The epitaxial structures have been grown on 4H-SiC using hot-wall metal-organic chemical vapor deposition with residual carbon doping. The leakage currents in OFF-state at 10 V drain voltage were in the same order of magnitude (10 −4 A/mm) for the high-doped and stepped-doped buffer. The high-doped material had a current collapse (CC) of 78.8% compared with 16.1% for the stepped-doped material under dynamic I-V conditions. The low-doped material had low CC (5.2%) but poor buffer isolation. Trap characterization revealed that the high-doped material had two trap levels at 0.15 and 0.59 eV, and the low-doped material had one trap level at 0.59 eV.Index Terms-Current collapse (CC), dispersion, gallium nitride (GaN), high-electron mobility transistor (HEMT), trap levels.

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Control of Short-Channel Effects in GaN/AlGaN HFETs

Cited by 33 publications

References 9 publications

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

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