Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

Han, Tiecheng; Zhao, Hongdong; Peng, Xiaocan; Li, Yuhai

doi:10.1016/j.spmi.2018.02.031

Cited by 21 publications

(9 citation statements)

References 19 publications

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“…The device surface was passivated by using Si 3 N 4 thin film to reduce the current collapse effect in the HEMT [31]. For all the simulations, donor trap was introduced at the In 0.17 Al 0.83 N with a trap level of 0.42 eV and a density of 3.86 × 10 13 cm −3 [32], while acceptor trap was considered in the unintentional doped (UID) GaN buffer with a trap level of 0.4 eV below the conduction band and a trap density of 1 × 10 17 cm −3 . During the two-dimensional numerical calculation, the drift-diffusion transport model as well as several important physical models such as Fermi-Dirac, low field electron mobility, high field mobility, Shockley-Read-Hall (SRH) and polarization were used to simulate the device response.…”

Section: Device Description and Physical Modelsmentioning

confidence: 99%

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Chang

Sun

et al. 2019

Electronics

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An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations. The results indicate that carrier confinement of the graded AlGaN back-barrier HEMT is significantly improved due to the conduction band discontinuity of about 0.46 eV at interface of GaN/AlGaN heterojunction. Meanwhile, the two-dimensional electron gas (2DEG) concentration of parasitic electron channel can be reduced by a gradient Al composition that leads to the complete lattice relaxation without piezoelectric polarization, which is compared with the conventional Al0.1Ga0.9N back-barrier HEMT. Furthermore, compared to the conventional back-barrier HEMT with a fixed Al-content, a higher transconductance, a higher current and a better radio-frequency performance can be created by a graded AlGaN back barrier.

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Section: Device Description and Physical Modelsmentioning

confidence: 99%

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Chang

Sun

et al. 2019

Electronics

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“…Over the past several decades, the conventional gallium nitride (GaN), in bulk form, has been widely applied because of its unique electronic and optoelectronic properties including high-room-temperature electron mobility (%10 3 cm 2 V À1 s À1 ), wide bandgap (%3.4 eV), and large short-wavelength absorption coefficient. [1][2][3][4] To date, the bulk GaN-based devices have been emerging in solar cells, [5][6][7] high-power transistors, [8,9] and water-splitting devices, [10] etc. In particular, the well-known wurtzite-GaN is a crucial material for the fabrication of lightemitting diodes (LEDs) and laser diodes.…”

Section: Introductionmentioning

confidence: 99%

Electronic and Optical Properties of the Type‐II GaN/SiH van der Waals Heterostructure: A First‐Principles Study

Lou

et al. 2022

Physica Status Solidi (b)

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In recent years, constructing van der Waals (vdW) heterostructures based on different 2D materials has been a highly effective way to obtain desired electronic and optical properties. Herein, on the basis of first‐principles calculations, a 2D vdW heterostructure is constructed by vertically stacking the indirect‐bandgap gallium nitride (GaN) and silicane (SiH) monolayers. For the formed heterostructure, the structural, electronic, and optical properties are all computed. The obtained results show that the heterostructure is a direct‐bandgap semiconductor with typical type‐II band alignment. Furthermore, the linearly tunable bandgap, together with the robust type‐II band alignment, can be realized by applying vertical strains or external electric fields. It is also found that both monolayers exhibit the same UV absorption range and the notably enhanced UV absorption is obtained after forming the heterostructure. In particular, the maximum absorptivity can reach to 21.6%. These results are expected to provide useful references for the design of ultraviolet optoelectronic devices based on the 2D GaN/SiH vdW heterostructure.

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“…Simon et al used the polarization doping for UV LEDs, 24 Tiecheng Han et al reported the polarization doping to reduce SCEs. 25 Chuanhao Li et al show the breakdown and current collapse characteristics of graded AlGaN buffer. 26 This paper has designed and investigated the DC and microwave performance of ultra-scaled 10 nm Tgate InAlN/AlN E-mode HEMT with heavily doped source/drain region and polarization doped buffer.…”

Section: Introductionmentioning

confidence: 99%

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

Sharma

Chaujar

2022

Int J RF Mic Comp-Aid Eng

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The DC and RF performance of ultra-scaled 10 nm E mode InAlN/AlN HEMT with polarized doped buffer has been investigated. The proposed device has the feature of polarized doped buffer, heavily doped source/drain region, and recessed T-gate structure. The polarization-induced doping in the buffer layer bent the conduction band upwardly convex, which enhanced the 2DEG confinement, reduced the buffer leakage current, and significantly uplifted the breakdown voltage (33 V), which is 5 times higher than the conventional InAlN/AlN GaN buffer HEMT (8 V). The short channel effect was further reduced by the recessed gate engineering (high on/off ratio 10 9 , subthreshold swing 78 mV/dec, and DIBL 100 mV/V), and smaller 10 nm foot length of Tgate reduced the parasitic capacitance, which uplifts the RF parameters of the proposed device. The proposed device exhibits a high current density of 2.8 A/ mm, transconductance 1.55 S/mm, cutoff frequency f T (583 GHz), and maximum oscillation frequency f max (840 GHz). At room temperature, the calculated carrier density and mobility are 2.8 Â 10 13 cm À2 and 1250 cm 2 /Vs. The large Jhonson figure of merit (f T . V BR ) 19.23 THz and (f T . f max ) 1/2 699 GHz shows the potential of the proposed device for high-power millimeter-wave applications.

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Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

Cited by 21 publications

References 19 publications

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronic and Optical Properties of the Type‐II GaN/SiH van der Waals Heterostructure: A First‐Principles Study

Ultrascaled 10 nm T‐gate E‐mode InAlN / AlN HEMT with polarized doped buffer for high power microwave applications

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