Contributions to development of high power SiC-IGBT

Avram, Mărioara; Brezeanu, Gheorghe; Avram, Andrei; Neagoe, O.; Brezeanu, M.; Iliescu, Ciprian; Codreanu, C.; Voitincu, C.

doi:10.1109/smicnd.2005.1558801

Cited by 11 publications

(7 citation statements)

References 14 publications

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“…Continuous improvements have been made to the P-IGBT's performance, notably since the charge storage layer (CSL) was introduced [96]. Due to immature technology and a P-type substrate with a high resistivity and defect density during this time, the constructed N-channel IGBT performs poorly [97].…”

Section: Sic Igbtmentioning

confidence: 99%

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

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This article provides a comprehensive review of wide and ultrawide bandgap power electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium nitride (GaN), and the emerging device diamond technology. Key parameters examined include bandgap, critical electric field, electron mobility, voltage/current ratings, switching frequency, and device packaging. The historical evolution of each material is traced from early research devices to current commercial offerings. Significant focus is given to SiC and GaN as they are now actively competing with Si devices in the market, enabled by their higher bandgaps. The paper details advancements in material growth, device architectures, reliability, and manufacturing that have allowed SiC and GaN adoption in electric vehicles, renewable energy, aerospace, and other applications requiring high power density, efficiency, and frequency operation. Performance enhancements over Si are quantified. However, the challenges associated with the advancements of these devices are also elaborately described: material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference. Alongside the cost reduction through improved manufacturing, material availability, thermal management, gate drive design, electrical insulation, and electromagnetic interference are critical hurdles of this technology. The review analyzes these issues and emerging solutions using advanced packaging, circuit integration, novel cooling techniques, and modeling. Overall, the manuscript provides a timely, rigorous examination of the state of the art in wide bandgap power semiconductors. It balances theoretical potential and practical limitations while assessing commercial readiness and mapping trajectories for further innovation. This article will benefit researchers and professionals advancing power electronic systems.

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Section: Sic Igbtmentioning

confidence: 99%

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Rafin,

Ahmed,

Haque

et al. 2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…Silicon carbide (SiC) power devices have experienced rapid development owing to their exceptional material properties, including a wide bandgap, high critical electric field, and excellent thermal conductivity. [1][2][3] In ultrahigh voltage applications (>10 kV), such as compact energy conversion and power grid systems, SiC insulated gate bipolar transistors (IGBTs) are favored over SiC MOSFETs due to their lower conduction losses in the conductivity-modulated drift layer. Both n-channel and p-channel 4H-SiC IGBTs have been demonstrated in previous studies.…”

Section: Introductionmentioning

confidence: 99%

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit

Wei,

Tian,

Liu

et al. 2024

Jpn. J. Appl. Phys.

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A silicon carbide p-channel insulated gate bipolar transistors (IGBTs) with higher breakdown voltage (BV) and low VF·Cres figure of merit (FOM) have been simulated, fabricated, and characterized successfully. The proposed IGBT adds two n-type implant regions in the junction field effect transistor (JFET) area and increases gate oxide thickness above the JFET area to reduce the reverse transfer capacitance (Cres) and gate oxide electric field (Eox).The proposed structure notably lowers Eox below 3 MV/cm while elevating BV to 16.6 kV. A new FOM of VF·Cres is defined to evaluate the trade-off between the on-state and the Cres characteristics. Experimental results demonstrate that a lower VF·Cres FOM of 0.369 V·pF is achieved from the proposed IGBT with a reduction of 66.4%, compared to the conventional Current Spreading Layer (CSL) IGBT. Meanwhile, the simulated turn-on and turn-off time of the proposed IGBT reduce by 29.4% and 20%, respectively.

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“…[5,6] If SiC and IGBT can be well combined, we will get device with excellent performance, such as high current conduction, low power consumption and operation at higher temperatures. [7] In recent years, we have been able to obtain SiC IGBT, which can well replace SiC MOSFET at high voltage in low-frequency switching applications. [8] And P-channel IGBT has been widely used because its performance is better than that of N-channel IGBT, [9] but the SiC P-type substrate required by P-channel SiC IGBT is very difficult to manufacture.…”

Section: Introductionmentioning

confidence: 99%

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Duan

Luo²,

Yang³

2023

Chinese Phys. B

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A novel Silicon Carbide gate-controlled bipolar field effect composite transistor with polysilicon region (SiC GCBTP) is proposed. Different from the traditional electrode connection mode of SiC VDMOS, the P+ region of P-well is connected with the gate in SiC GCBTP, and the polysilicon region is added between the P+ region and the gate. By this method, additional minority carriers can be injected into the drift region in on-state, and the distribution of minority carriers in the drift region will be optimized, so the on-state current is increased. In terms of static characteristics, it has the same high breakdown voltage (811V) as SiC VDMOS which length of drift is 5.5 μm. The on-state current of SiC GCBTP is 2.47×10-3 A/μm (V G=10V, V D=10V) which is 5.7 times that of SiC IGBT and 36.4 times that of SiC VDMOS. In terms of dynamic characteristics, the turn-on time of SiC GCBTP is only 0.425ns. And the turn-off time of SiC GCBTP is similar to SIC IGBT, which is 114.72ns.

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Contributions to development of high power SiC-IGBT

Cited by 11 publications

References 14 publications

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

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Contributions to development of high power SiC-IGBT

Cited by 11 publications

References 14 publications

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices

A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V F·C res figure of merit

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

Contact Info

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A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit