Continuous-wave and Q-switched operation of a compact, diode-pumped Yb^3+:KY(WO_4)_2 planar waveguide laser

Bain, F. M.; Lagatsky, A.A.; Kurilchick, S. V.; Kisel, V. É.; Guretsky, S. A.; Luginets, A. M.; Каланда, Н. А.; Kolesova, I. M.; Кулешов, Н. В.; Sibbett, W.; Brown, C.T.A.

doi:10.1364/oe.17.001666

Cited by 41 publications

(28 citation statements)

References 22 publications

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“…These requirements can be satisfied readily in waveguide-based laser configurations. As previously reported, efficient lasing has been demonstrated in planar waveguides of Yb:KYW [15,16] and for Lu, Gd codoped Yb:KYW grown by liquid phase epitaxy (LPE) [17,18]. Channel waveguides have been demonstrated in Yb:KYW by strip loading an LPE grown planar waveguide layer where laser performance was reported with a threshold of 82 mW of absorbed pump power and a maximum output power of 14 mW at 1025 nm [19].…”

Section: Introductionmentioning

confidence: 53%

Ultrafast laser inscribed Yb:KGd(WO_4)_2 and Yb:KY(WO_4)_2 channel waveguide lasers

Bain¹,

Lagatsky²,

Thomson³

et al. 2009

Opt. Express

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Abstract:We demonstrate laser action in diode-pumped microchip monolithic cavity channel waveguides of Yb:KGd(WO 4 ) 2 and Yb:KY(WO 4 ) 2 that were fabricated by ultrafast laser writing. The maximum output power achieved was 18.6 mW with a threshold of approximately 100 mW from an Yb:KGd(WO 4 ) 2 waveguide laser operating at 1023 nm. The propagation losses for this waveguide structure were measured to be 1.9 dBcm References and links1. K. M. Davis, K. Miura, N. Sugimoto, and K. Hirao, "Writing waveguides in glass with a femtosecond laser,"Opt. Lett. 21(21), 1729-1731 (1996). 2. R. R. Gattass, and E. Mazur, "Femtosecond laser micromachining in transparent materials," Nat. Photonics 2(4), 219-225 (2008). D. Miller, C. Hnatovsky, and R. S. Taylor, "Raman gain from waveguides inscribed in KGd(WO4)2 by high repetition rate femtosecond laser," Appl.

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Section: Introductionmentioning

confidence: 53%

Ultrafast laser inscribed Yb:KGd(WO_4)_2 and Yb:KY(WO_4)_2 channel waveguide lasers

Bain¹,

Lagatsky²,

Thomson³

et al. 2009

Opt. Express

Self Cite

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“…The successful combination of the advantages of the waveguide laser geometry and the spectroscopic properties of monoclinic double tungstates was demonstrated with planar waveguide lasers based on Yb:KYW in the 1 µm spectral range [16][17][18]. So far, true planar Tm-waveguide lasing has only been demonstrated based on YAG.…”

Section: +mentioning

confidence: 99%

Continuous-wave and Q-switched Tm-doped KY(WO_4)_2 planar waveguide laser at 184 µm

Bolaños¹,

Carvajal²,

Mateos³

et al. 2011

Opt. Express

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High-quality monoclinic planar waveguide crystals of Tm-doped KY(WO 4 ) 2 codoped with Gd 3+ and Lu 3+ were grown by liquid-phase epitaxy. For the first time, planar waveguide lasing was demonstrated in a monolithic cavity in the 2 µm spectral range. The laser was operated in the Q-switched mode using a Cr 2+ :ZnSe crystal as saturable absorber and in the continuous-wave regimes. The Q-switched planar waveguide laser delivered pulse energies up to 120 nJ at a repetition rate of 7 kHz.

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“…Ionexchange is a versatile technique for producing low-loss waveguides and is compatible with photonic mass-production techniques. Q-switched waveguide lasers have been demonstrated using a variety of saturable absorbers [13][14][15][16][17] including graphene [17]. However, there have been limited reports of graphene mode-locked waveguide lasers, with femtosecond-written waveguide lasers generating Q-switched mode-locked pulses [18,19].…”

Section: Introductionmentioning

confidence: 99%

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

Choudhary

Dhingra

D’Urso

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-In this paper, we present the use of mono-layer graphene saturable absorbers to produce Q-switched and Qswitched mode-locked operation of Yb and Yb:Er-doped phosphate glass waveguide lasers, respectively. For the 1535-nmwavelength Yb:Er laser, the Q-switched pulses have repetition rates up to 526 kHz and contain mode-locked pulses at a repetition frequency of 6.8 GHz. The measured 0.44 nm bandwidth should allow pulses as short as ~6ps to be generated. Maximum average output powers of 27 mW are obtained at a slope efficiency of 5% in this mode of operation. For the 1057-nm-wavelength Yb laser, Q-switched pulses are obtained with a repetition rate of up to 833 kHz and a maximum average output power of 21 mW. The pulse duration is found to decrease from 292 ns to 140 ns and the pulse energy increase from 17 nJ to 27 nJ as the incident pump power increases from 220 to 652 mW.

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Continuous-wave and Q-switched operation of a compact, diode-pumped Yb^3+:KY(WO_4)_2 planar waveguide laser

Cited by 41 publications

References 22 publications

Ultrafast laser inscribed Yb:KGd(WO_4)_2 and Yb:KY(WO_4)_2 channel waveguide lasers

Ultrafast laser inscribed Yb:KGd(WO_4)_2 and Yb:KY(WO_4)_2 channel waveguide lasers

Continuous-wave and Q-switched Tm-doped KY(WO_4)_2 planar waveguide laser at 184 µm

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

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