Continuous-wave and Q-switched Tm-doped KY(WO_4)_2 planar waveguide laser at 184 µm

Bolaños, Western; Carvajal, Joan J.; Mateos, Xavier; Cantelar, Eugenio; Lifante, G.; Griebner, Uwe; Petrov, Valentín; Panyutin, Vladimir; Murugan, Ganapathy Senthil; Wilkinson, James S.; Aguiló, Magdalena; Dı́az, Francesc

doi:10.1364/oe.19.001449

Cited by 46 publications

(30 citation statements)

References 24 publications

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“…Research interest in recent years has shifted towards deposition of rare-earth doped double tungstate structures [65,[76][77][78][79][80][81][82][83][84][85], due to a number of favorable properties of these crystals, such as the possibility of doping with high concentrations of rare earth ions and the large emission and absorption cross sections of the latter in this family of crystals. Finally, there is only one report to date on a waveguide laser based on other crystals, namely on YLF:Nd 3+ [86].…”

Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

“…The main limitations of this method are the lack of accurate thickness control and the poor surface uniformity of the layer, which however, can be overcome by polishing. LPE has been extensively used for growth of oxide layers and for waveguide lasers in particular, early work focused on development of rare-earth doped garnet films [66,[68][69][70][71][72][73][74][75].Research interest in recent years has shifted towards deposition of rare-earth doped double tungstate structures [65,[76][77][78][79][80][81][82][83][84][85], due to a number of favorable properties of these crystals, such as the possibility of doping with high concentrations of rare earth ions and the large emission and absorption cross sections of the latter in this family of crystals. Finally, there is only one report to date on a waveguide laser based on other crystals, namely on YLF:Nd 3+…”

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confidence: 99%

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Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Grivas

2011

Progress in Quantum Electronics

193

102

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Abstract:The tremendous interest in the field of waveguide lasers in the past two decades is largely attributed to the geometry of the gain medium, which provides the possibility to store optical energy on a very small dimension in the form of an optical mode. This allows for realization of sources with enhanced optical gain, low lasing threshold, and small footprint and opens up exciting possibilities in the area of integrated optics by facilitating their on-chip integration with different functionalities and highly compact photonic circuits. Moreover, this geometrical concept is compatible with high power diode pumping schemes as it provides exceptional thermal management, minimizing the impact of thermal loading on laser performance. The proliferation of techniques for fabrication and processing capable of producing high optical quality waveguides has greatly contributed to the growth of waveguide lasers from a topic of fundamental research to an area that encompasses a variety of practical applications. In this first part of the review on optically pumped waveguide lasers the properties that distinguish these sources from other classes of lasers will be discussed. Furthermore, the current state-of-the art in terms of fabrication tools used for producing waveguide lasers is reviewed from the aspects of the processes and the materials involved. 2 1.IntroductionOver the last two decades the field of solid-state planar waveguide lasers has experienced a steady growth, progressing from a laboratory curiosity to an area that demonstrates a broad spectrum of applications, from multiwavelength laser channel arrays for telecommunications to diode-pumped planar structures with multiwatt output powers for sensing and ranging applications. Waveguide lasers are by no means a new field and the first report on such a source dates back in 1961, when laser operation of a waveguide based on an active glass core rod embedded in a low refractive index cladding was demonstrated [1]. However research efforts in the years that followed this report focused primarily on the development of optically pumped laser sources based on high optical quality bulk dielectric laser media in the form of rods and slabs. The merits of the waveguide geometry and the associated optical confinement have been first highlighted in single mode glass optical fibers. Fibers have proven an enabling technology for realization of highly efficient amplifier and laser sources owing to their unrivalled low loss performance and ability to maintain a small spot size and hence high intensities over lengths that are orders of magnitude longer than would normally be allowed by diffraction, [2,3]. Er-doped fiber amplifiers (EDFAs) in particular have directly contributed to the enormous expansion of the optical communications networks that underpin today's internet infrastructure by allowing for signal regeneration and optical data transmission over long distances. The excellent performance of fiber lasers and amplifiers provided motivation and triggered a major techn...

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Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

mentioning

confidence: 99%

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Grivas

2011

Progress in Quantum Electronics

193

102

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“…Particularly for the waveguide geometry, the concept of 'mixed' active layer host, KGd x Y y Lu z W (x + y + z = 1), has been to provide (i) optimum refractive index contrast and (ii) optimum lattice-matching with respect to the undoped substrate, usually KYW, as well as (iii) to ensure high doping levels of active ions [9][10][11]. High optical quality and low propagation loss (<0.2 dB cm −1 ) few µm-thick films of Tm:KGd x Y y Lu z W have been grown on bulk KYW substrates and continuouswave (CW) [4,6,12] and passively Q-switched (PQS) [13] laser operation has been reported to date. 2+ :ZnSe has been used as a saturable absorber (SA).…”

Section: Introductionmentioning

confidence: 99%

Graphene Q-switched Tm:KY(WO₄)₂waveguide laser

et al. 2017

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We report on the first Tm 3+ -doped double tungstate waveguide laser passively Q-switched by a graphene saturable absorber using a 12.4 µm-thick 3 at.% Tm:KY 0.58 Gd 0.22 Lu 0.17 (WO 4 ) 2 epitaxial layer grown on a (0 1 0)-oriented pure KY(WO 4 ) 2 substrate. This laser generated 5.8 nJ/195 ns pulses at 1831.8 nm corresponding to a pulse repetition frequency of 1.13 MHz. These are the shortest pulses achieved in passively Q-switched Tm waveguide lasers. The laser slope efficiency was 9% and the Q-switching conversion efficiency reached 45%. Graphene is promising for the generation of ns pulses at ~2 µm in Tm 3+ -doped double tungstate waveguide lasers operating in the MHz-range.

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“…Ionexchange is a versatile technique for producing low-loss waveguides and is compatible with photonic mass-production techniques. Q-switched waveguide lasers have been demonstrated using a variety of saturable absorbers [13][14][15][16][17] including graphene [17]. However, there have been limited reports of graphene mode-locked waveguide lasers, with femtosecond-written waveguide lasers generating Q-switched mode-locked pulses [18,19].…”

Section: Introductionmentioning

confidence: 99%

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

Choudhary

Dhingra

D’Urso

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-In this paper, we present the use of mono-layer graphene saturable absorbers to produce Q-switched and Qswitched mode-locked operation of Yb and Yb:Er-doped phosphate glass waveguide lasers, respectively. For the 1535-nmwavelength Yb:Er laser, the Q-switched pulses have repetition rates up to 526 kHz and contain mode-locked pulses at a repetition frequency of 6.8 GHz. The measured 0.44 nm bandwidth should allow pulses as short as ~6ps to be generated. Maximum average output powers of 27 mW are obtained at a slope efficiency of 5% in this mode of operation. For the 1057-nm-wavelength Yb laser, Q-switched pulses are obtained with a repetition rate of up to 833 kHz and a maximum average output power of 21 mW. The pulse duration is found to decrease from 292 ns to 140 ns and the pulse energy increase from 17 nJ to 27 nJ as the incident pump power increases from 220 to 652 mW.

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Continuous-wave and Q-switched Tm-doped KY(WO_4)_2 planar waveguide laser at 184 µm

Cited by 46 publications

References 24 publications

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Graphene Q-switched Tm:KY(WO₄)₂waveguide laser

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

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Continuous-wave and Q-switched Tm-doped KY(WO_4)_2 planar waveguide laser at 184 µm

Cited by 46 publications

References 24 publications

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Optically pumped planar waveguide lasers, Part I: Fundamentals and fabrication techniques

Graphene Q-switched Tm:KY(WO4)2waveguide laser

Graphene Q-Switched Mode-Locked and Q-Switched Ion-Exchanged Waveguide Lasers

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Graphene Q-switched Tm:KY(WO₄)₂waveguide laser