Contactless measurement of semiconductor conductivity by radio frequency-free-carrier power absorption

Miller, G. L.; Robinson, D. A.; Wiley, J. D.

doi:10.1063/1.1134756

Cited by 66 publications

(27 citation statements)

References 8 publications

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“…For further details see also [5]. The sheet resistance of the samples is measured contactless by a Tencor Instruments m-gage 300 [6]. The sheet resistance mappings across the wafers showed an excellent uniformity with a deviation of less than 0.5 % for samples below 200 Ω , around 1 % for samples up to 2000 Ω , and less than 5 % for samples above 2000 Ω .…”

Section: Introductionmentioning

confidence: 99%

Determination of the surface potential of GaN:Si

Köhler

Maier

Kirste

et al. 2009

Phys. Status Solidi (c)

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The surface potential of GaN:Si is determined for Si doping from 2.4 × 1017 cm–3 to 2.3 × 1019 cm–3 in layers grown by low pressure metal‐organic vapor‐phase epitaxy. We used the sheet resistance of the samples with different thicknesses measured by eddy current, a nondestructive, contactless method, to determine the depleted region. From the width of the depletion layer, which is dependent on the doping concentration, measured by secondary ion mass spectrometry, we obtained the GaN:Si surface potential on the basis of the depletion approximation. The surface potential decreases with increasing carrier concentration from about 1.6 eV down to 0.2 eV. Based on the behavior of the surface potential with doping we determined the surface state density. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Determination of the surface potential of GaN:Si

Köhler

Maier

Kirste

et al. 2009

Phys. Status Solidi (c)

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“…This technique can again be used to create a resistivity map by moving the library beneath the measurement coil. 43,44 Electrical conductivity (s) is the inverse of r and is related to the concentrations of electrons (n e ) and holes (n p ) through their respective mobilities (m e and m p ) and by: s ¼ n e em e þ n p em p (6.5) where e is the magnitude of the electronic charge. The dominant or majority carrier type can be determined several different ways depending on the degree of electrical conductivity.…”

Section: Mapping Librariesmentioning

confidence: 99%

New Chalcogenide Materials for Thin Film Solar Cells

Lane

Hutchings

McCracken

et al. 2014

Materials Challenges

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This chapter describes the search for new inorganic materials for thin film photovoltaic cells. It begins with the quest to bring down the cost of power generation by the move from crystalline silicon to thin film materials such as cadmium telluride (CdTe), copper indium selenide (CIS) and copper indium gallium diselenide (CIGS). The reliance of these materials on scarce and expensive elements, and the search for alternative sustainable materials, is then discussed. However, thoroughly investigating a new material is a protracted process and methods for surveying new compounds using high throughput or combinatorial techniques are presented. These reduce process time by growing a wide range of material compositions in parallel in a single specimen. Methods for thin film growth and analysis are discussed, as are the materials, Cu2ZnSn(S,Se)4 (CZTS), and the sulfosalt systems Cu–Sb–(S,Se), Cu–Bi–S and Sn–Sb–S.

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“…Recent advancements allow determination of iron densities as low as 10 8 cm -3 . The iron density is given by 9 [1] where L nf and L ni are the final and initial diffusion lengths in µm. As the iron density in Si wafers decreases to 10 9 cm -3 and below, it becomes more difficult to determine N Fe for several reasons.…”

Section: Minority Carrier Lifetime Defectsmentioning

confidence: 99%