Contactless growth of ZnSe single crystals by physical vapor transport

Abstract

2S/^11ZCZnSe crystals were grown by self-seeded physical vapor transport (PVT) technique in the horizontal configuration. The source materials were heat treated by H 2 reduction to remove the oxide followed by baking under dynamic vacuum to adjust the source composition toward that of congruent sublimation. Contactless growth of ZnSe single crystals have been performed consistently using three different source materials. The crystals grew away from the wall during the later stage of the growth with large (110) facets tend to align parallel to the gravity direction. The SEM micrographs and the ATM images showed that large (110) terraces and steps dominate the as-grown facets. The measured residual gas pressures in the processed ampoules agree well among various source materials and the major components were CO and H 2 . No preferred growth direction was found. The one-dimensional diffusion model on the mass flux of a multi-species PVT system was employed to analyze the conditions for contactless growth. The calculated thermal profile for supersaturation is very close to the thermal profile measured inside the empty furnace bore in the region of contactless growth. The effects of convective flows in the vapor phase inside the ampoule on the growth processes are discussed.

Vertically aligned and hexagonal crystal ZnSe nanoribbon arrays on Zn substrates

“…As a Zn-based II-VI compound, ZnSe is a direct band gap semiconductor with roomtemperature band gap energy of 2.8 eV. Therefore, ZnSe has attracted great interest in the field of thin films, quantum wells, and bulk crystals material researches [1][2][3][4][5][6]. ZnSebased optoelectronic devices have also been the subject of intensive study [7].…”

Large-scale synthesis of ZnSe nanoribbons on zinc substrate

“…There were a lot of literature data on the application of ZnSe in the field of thin films, quantum wells, bulk crystals materials, and sensor and optoelectronic devices [1][2][3][4][5]. On the other hand, 1D semiconductor nanostructures are of special interest in the assembly of nanodevices, such as logic circuits, nanosensors, nanolasers etc.…”

Growth of ZnSe single crystals from Zn–Se–Zn(NH4)3Cl5 system

“…Great efforts have been devoted to grow ZnSe single crystal. Different methods, such as vertical Bridgman (VB) [5], zone melting [6], solution method [7], solid-phase recrystallization (SPR) [8], physical vapor transport (PVT) [9] and chemical vapor transport (CVT) [10], have been designed to grow ZnSe bulk single crystals. In all of these techniques, ZnSe powders or polycrystals with high purity and idea stoichiometry were always employed as the source materials.…”