Uniform ZnSe precursor (ZnSe : 0.38en, en = ethylenediamine) nanoribbon arrays are grown vertically on Zn foils in ethylenediamine (en) using a solvothermal method. After the annealing treatment in N2, the ZnSe nanoribbon arrays can be obtained without an obvious morphology change and the crystallinity of ribbons is greatly improved. The microstructures of both individual ZnSe precursor and ZnSe nanoribbons are investigated. Field emission characteristics show that the onset field required drawing a current density of ∼0.1 µ A cm−2 from the ZnSe nanoribbons is 5.0 V µm−1 and the field enhancement factors are determined to be ∼1382.