Growth of ZnSe single crystals from Zn–Se–Zn(NH4)3Cl5 system

Li, Huanyong; Wang, Jie; Xu, Ke

doi:10.1016/j.jcrysgro.2004.11.413

Cited by 16 publications

(11 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1(a)), and especially exhibits a well-complete faces {111} with FWHM 108 0 of X-ray rocking curve, and its composition was identified by EDS as molar ratio Zn:Se = 1:1.01, very close to the ideal chemical stoichiometry. ZnSe crystal (b) has only (111) face with about 0.1 mm thickness and molar ratio Zn:Se = 1:1.03, similar to characteristic feature of ZnSe crystal from Zn-Se-Zn(NH 4 ) 3 Cl 5 [11]. ZnTe crystal (c) has also only (111) face with about 0.5 mm thickness and molar ratio Zn:Te = 1:1.04, looking like the shape of ZnSe (b).…”

Section: Resultsmentioning

confidence: 69%

“…According to Fig. 2, there are some step lines between two dominant peaks in three RO-XRD patterns, meaning that the ZnE specimen contains some polycrystallinity at the edge of growth (111) macrosurface [11]. The FWHM of the butterfly diagram obtained from RO-XRD, generally being the mean FWHM value of two dominant peaks, represents the directional divergence of growth layer, which can be used to evaluate the crystalline quality of ZnE [17].…”

Section: Resultsmentioning

confidence: 99%

“…However, due to the narrow vapor-solid homogeneity range in II-VI wide-gap compound, their polycrystal source used in physical vapor transport (PVT) has to be treated accurately to adjust its composition to be the expected ideal stoichiometry [6,10], which presents the high cost. A potential route to reduce production cost of these crystals is to employ the constituent elements as the source materials [11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Zhi

Zhang

et al. 2015

Materials Research Bulletin

Self Cite

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Zhi

Zhang

et al. 2015

Materials Research Bulletin

Self Cite

View full text Add to dashboard Cite

“…It is well known that the transport species in ZnSe vapor phase growth are the vapors of Zn and Se 2 by using high-purity metals of selenium and zinc as the raw materials [23][24][25]. The main reaction involved in the synthesized process is illustrated as follows:…”

Section: Resultsmentioning

confidence: 99%

Synthesis and photoluminescence of semiconductor ZnSe hollow microspheres by two-sourced evaporation

Wei

Chang

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Alternative methods for the crystals growth are the growth from the vapour phase by physical transport [1][2][3] or chemical transport in a closed system using different transport agents (iodine [4][5][6][7][8][9][10][11][12][13][14], NH 4 Cl [15], Zn(NH 4 ) 3 Cl 5 [16][17][18]). In the last system the growth rate is controlled either by the interface kinetical processes or by the mass transport in the vapour phase [19].…”

Section: Introductionmentioning

confidence: 99%

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂

Stănculescu

2010

Cryst. Res. Technol.

View full text Add to dashboard Cite

We have studied the growth of ZnSe crystals by chemical transport in a closed system in nonstoichiometric conditions, and we have deduced that the interface kinetics is the phenomenon limiting the growth process. The effect on the growth process of the deviation from stoichiometry of the II-VI compound was investigated using a mathematical model that involves indirect data computed from directly obtained experimental values. The experimental crystallization rate was compared with the maximum value of the transport flux calculated using the Arizumi-Nishinaga model. The influence of the stoichiometry of the source material and of the variations in the growth parameters (supercooling, geometrical dimension, specific loading of the ampoule and iodine concentration) on the ZnSe crystal growth process has also been studied. IntroductionThe growth of the bulk wide gap II-VI semiconductor compounds, such as zinc selenide (ZnSe) for optical and opto-electronic applications, rises problems because they have high melting points and they decompose in volatile components below this temperature. Alternative methods for the crystals growth are the growth from the vapour phase by physical transport [1][2][3] or chemical transport in a closed system using different transport agents (iodine [4][5][6][7][8][9][10][11][12][13][14], NH 4 Cl [15], Zn(NH 4 ) 3 Cl 5 [16][17][18]). In the last system the growth rate is controlled either by the interface kinetical processes or by the mass transport in the vapour phase [19]. The first thermodynamic analysis of the chemical transport reaction in closed tube system has been done by Schäfer [20][21][22] who explained the transport of the solid material considering only the diffusion and laminar flows and neglecting all the other influences on the transport in the vapour phase. Lever [23] has developed a model for the transport of the solid between two regions situated at different temperatures and he has deduced a transport function for an one-dimensional, steady-state diffusion limited process, in a single heterogeneous equilibrium system. Arizumi-Nishinaga [24][25][26] has introduced another transport function taking into account equilibrium considerations, Fick's diffusion law and Schäfer expression for the transport rate.The method to grow single crystals from the vapour phase by chemical transport was firstly presented by Nitsche [27] and further developed by Kaldis [28]. Lately the interest for this growth method has increased and computational studies of different systems such as ZnSe+I 2 have been developed [12][13][14].This paper presents some results about the influence of the stoichiometry of the starting material on the crystallization process. To investigate the effect of the deviation from stoichiometry and thermal regime on the growth process of ZnSe crystals by iodine transport, we have considered two different successive phenomena: the transport of the species present in the gaseous phase (transport kinetics) and the incorporation of the gaseous species at the crystal-vapou...

show abstract

Growth of ZnSe single crystals from Zn–Se–Zn(NH4)3Cl5 system

Cited by 16 publications

References 23 publications

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Synthesis and photoluminescence of semiconductor ZnSe hollow microspheres by two-sourced evaporation

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂

Contact Info

Product

Resources

About

Growth of ZnSe single crystals from Zn–Se–Zn(NH4)3Cl5 system

Cited by 16 publications

References 23 publications

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Vapor growth of typical II-VI wide-gap semiconductor crystals directly from the constituent elements

Synthesis and photoluminescence of semiconductor ZnSe hollow microspheres by two-sourced evaporation

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I2

Contact Info

Product

Resources

About

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂