Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP_1−xBi_x dilute bismide with x ≤ 0.034

Abstract

Contactless electroreflectance is applied to study the band gap (E 0) and spin-orbit splitting (D SO) in InP 1Àx Bi x alloys with 0 < x 0.034. The E 0 transition shifts to longer wavelengths very significantly (À83 meV/% Bi), while the E 0 þ D SO transition shifts very weakly (À13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E 0 and E 0 þ D SO transitions, obtained within ab-initio calculations, are À106 and À20 meV per % Bi, respectively, which is in a good agreement with experimental results. V

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

“…Theoretical calculations predict that the bandgap reduction by Bi incorporation into InP is about 106 meV/% Bi with 27 meV/% Bi downshift for CB and 79 meV/% Bi upshift for VB [161]. The PL spectrum consists of three peaks originated from two deep levels confirmed by deep level transient spectroscopy (DLTS) [161], in which one is P In antisite related donor level below the CB and the other is Bi related acceptor level above the VB.…”

“…Theoretical calculations predict that the bandgap reduction by Bi incorporation into InP is about 106 meV/% Bi with 27 meV/% Bi downshift for CB and 79 meV/% Bi upshift for VB [161]. The PL spectrum consists of three peaks originated from two deep levels confirmed by deep level transient spectroscopy (DLTS) [161], in which one is P In antisite related donor level below the CB and the other is Bi related acceptor level above the VB. The three peaks labeled as low energy (LE), middle energy (ME) and high energy (HE), respectively are attributed to recombination between the P In antisite level and the Bi related level, the P In antisite level and VB, and CB and the Bi related level, respectively.…”

“…The band structures of InP 1−x Bi x alloys with 0< x ≤ 0.034 are studied using CER spectroscopy and ab initio calculations [161]. The E 0 transition shifts to long wavelengths very significantly (−83 meV/% Bi), while the E 0 ± ∆ SO transition shifts very weakly (−13 meV/% Bi) with increasing Bi concentration.…”

“…By comparing the reduced effective mass and exciton radius of each PL process, they clarified that the interface of GaSbBi/AlGaSb QW is a terrace-like structure, due to the Bi-induced interfacial Al/Ga inter-diffusion. [20,21,25,29,44,74,149,161,165,168,185,188,190,205,212,[235][236][237].…”

Negative thermal quenching of below-bandgap photoluminescence in InPBi

“…12 For InP 1-x Bi x , which is compatible with InP-based devices and the bandgap reduction is as large as 60-80 meV/%Bi, [15][16][17][18][19] however, the bandedge PL emission is missing and an extraordinarily broad below-bandgap PL emission shows up in a range of 0.9-2.5 lm.…”