Contactless electrical testing of large area specimens using electron beams

Pfeiffer, H. C.; Langner, G. O.; Stickel, W.; Simpson, R. A.

doi:10.1116/1.571159

Cited by 26 publications

(19 citation statements)

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“…VC-SEM, as described here, involves externally biasing the substrate (sometimes called VC Type 2). VC Types 1 and 2 have been used in microelectronics for failure location in interconnects [16]. An associated mechanism (sometimes called VC Type 3) has been used to image dopant concentrations [17] at inorganic bulk material interfaces.…”

Section: Introductionmentioning

confidence: 99%

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan¹,

Blatt

Marquardt

et al. 2008

Nano Res.

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We introduce voltage-contrast scanning electron microscopy (VC-SEM) for visual characterization of the electronic properties of single-walled carbon nanotubes. VC-SEM involves tuning the electronic band structure and imaging the potential profi le along the length of the nanotube. The resultant secondary electron contrast allows to distinguish between metallic and semiconducting carbon nanotubes and to follow the switching of semiconducting nanotube devices, as confi rmed by in situ electrical transport measurements. We demonstrate that high-density arrays of individual nanotube devices can be rapidly and simultaneously characterized. A leakage current model in combination with fi nite element simulations of the device electrostatics is presented in order to explain the observed contrast evolution of the nanotube and surface electrodes. This work serves to fi ll a void in electronic characterization of molecular device architectures.

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Section: Introductionmentioning

confidence: 99%

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Vijayaraghavan¹,

Blatt

Marquardt

et al. 2008

Nano Res.

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“…Figure 12 shows how DFI compares to other electron-beam systems, when used in the full die view mode. Also shown is the contactless testing method developed at IBM for testing "thermoconduction modules" [21].…”

Section: Electron Optics Ad Voltage Contrastmentioning

confidence: 99%

Dynamic Fault Imaging of VLSI Random Logic Devices

May

Scott

Meieran

et al. 1984

22nd International Reliability Physics Symposium

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“…This is illustrated in Fig. 13, which was taken from Pfeiffer et al (1981), and shows schematically the connector pattern in a multilayer packaging substrate. The matrix in this case is ceramic.…”

Section: Specimen Structuresmentioning

confidence: 99%

“…In the approaches reported by Sebeson (1973), and Gill et al (1979) a single electron beam is used, and t~e acceleration voltage is switched between the charging and the read phase. Engelke (1974) operates with two individually controlled beams, and Pfeiffer et al (1981) use flood beams and one probe beam simultaneously or in sequence.…”

Section: Operational Conditionsmentioning

confidence: 99%

Electron beam induced voltage and injected charge modes of testing

Lukianoff

Langner

1983

Scanning

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IntroductionThe usefulness of the electron beam testing in the semiconductor industry has been described and substantiated by many workers (Wolfgang 1980, Menzel andKubalek 1981). Several testing modes have been well described and analyzed. Recently, one of the less known modes of operation is gaining popularity. It is the no-contact version of beam utilization in the induced voltage mode.Consideration for contactless mode is given when conventional methods can not satisfy testing needs. Typical testing requirements to be satisfied are:No mechanical contacts Probing of small areas No damage to the device tested Speed of testing operation. The other testing technique available beside electron beam (E-beam) is mechanical probing. However, mechanical probing is slow, usually it is destructive, it poorly accesses devices, its needles are too large for VLSI type device sizes, and it disrupts operation of some dynamic circuits.Focused electron beams, in different modes of utilization, do satisfy the above requirements. Processes in Voltage InductionsAn impinging electron beam produces several effects' three of which are used in the charge deposition for induction of voltages utilized for testing. The effects are: production of surface charges, induction of bulk charges, and injection of negative charges. All these effects take place on every irradiated specimen; however, their relative importance, in producing detectable signals, depends on the specimen materials and structural configuration.An important issue is the ability to produce potentials in selected places for testing purposes. The mechanism of voltage induction depends on the material and structure of the specimen. In general, there are three types of materials present in the semiconductor devices: semiconductors, metals, and insulators. SemiconductorsVoltage induction in semiconductors depends on the presence or absence of junctions. When junctions are present, induced charges produce a self biasing effect. When there are no junctions, semiconductors act similarly to metals. Under special conditions, junctions can be biased in the ways required by the test. MetalsAn impinging beam, depending on its energy, produces surface charges, which propagate throughout the conductor and reveal themselves through corresponding positive or negative potentials. Thus surface charging is the predominant effect. 54 G. V. Lukianoff, G. O. Langner: Electron beam induced voltage and injected charge modes of testing InsulatorsCharging effects on an insulator are governed by the secondary emission yield curve. Depending on the beam energy, either positive or negative charges can be produced at the top surface.Semiconductor devices are frequently layered structures of different materials. In such cases, each structure has to be analyzed individually. Semiconductors Operational conditionsProduction of the induced potentials and their detection define operational conditions for the electron beam. Energy of the beam, for testing of semiconductors with the junctions, is selected so a...

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Contactless electrical testing of large area specimens using electron beams

Cited by 26 publications

References 0 publications

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Imaging electronic structure of carbon nanotubes by voltage-contrast scanning electron microscopy

Dynamic Fault Imaging of VLSI Random Logic Devices

Electron beam induced voltage and injected charge modes of testing

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