Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

Swirhun, S.E.; Saraswat, Krishna C.; Swanson, R.M.

doi:10.1109/edl.1984.25890

Cited by 53 publications

(32 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As presented in Figure 8, we were able to extract contact resistivity (R C ) from 4 to 43.ȝm 2 in good agreement with published values (16)(17)(18). Then we act on process parameters to further reduce PtSi/pSi.…”

Section: Resistivity Contact Extraction Resultssupporting

confidence: 70%

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

et al. 2013

View full text Add to dashboard Cite

To improve 20nm FD-SOI pMOS transistor performances, salicide process must be optimized on SiGe source&drain. In this paper, we propose an investigation on Ni and Pt/Si1-xGex (x=0.15, 0.3) systems. In a first part, process window is studied to determine thermal budget domain where the less resistive phase is stable morphologically and thermically. Solid state reactions in terms of phase sequence, thermal stability and morphology have been examined. At high temperature, two kinds of degradations have been observed. In Ni case, Ge out diffusion leads to the film agglomeration. In Pt case, grain coalescence degrades germanosilicide film. In a second part, contact resistivity has been extracted on lateral germanosilicides thanks to new designed structures. After a validation on Pt/Si system, RC extraction has been carried out on Si1-xGex substrate up to 30% of Ge. RC seems to be better with Pt compared to Ni with the same conditions of process optimizations.

show abstract

Section: Resistivity Contact Extraction Resultssupporting

confidence: 70%

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

et al. 2013

View full text Add to dashboard Cite

show abstract

“…The reaction conditions can be chosen so that W does not deposit on insulators like SIO2, Si3N4, etc., but only grows on (semi-)conductors like Si and A1 (4,(6)(7)(8).…”

mentioning

confidence: 99%

In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

Holleman

Hasper

Middelhoek

1991

J. Electrochem. Soc.

View full text Add to dashboard Cite

The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven to be a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurement of the deposition rate: The influence of surface roughening due to either the W growth or an etching pretreatment of the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.

show abstract

“…Furthermore, because the PtSi and W are self-aligned depositions [ 8 ] , we do not agree that "new and different techniques" promised by HR allow all the interfaces to be measured individually, although a technique that allows this would be useful indeed.…”

mentioning

confidence: 73%

“…It can be argued that the PtSiiSi interface introduces the largest contribution to the contact resistivity, but no argument or measurements is provided to support this. Further the PtSi will have a finite sheet resistance and we have shown that to model and measure such interfaces one needs new and different techniques [ 7 ] , [8]. These techniques enable the various interfaces to be separated and measured individually.…”

mentioning

confidence: 99%

Reply to "Comment on 'An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors'"

Swirhun

Loh²,

Crabbé³

et al. 1986

IEEE Electron Device Lett.

Self Cite

View full text Add to dashboard Cite

Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

Cited by 53 publications

References 3 publications

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

Reply to "Comment on 'An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors'"

Contact Info

Product

Resources

About

Contact resistance of LPCVD W/Al and PtSi/W/Al metallization

Cited by 53 publications

References 3 publications

Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

Reply to "Comment on 'An accurate method to extract specific contact resistivity using cross-bridge Kelvin resistors'"

Contact Info

Product

Resources

About

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain