Contact Resistance of Inkjet-Printed Silver Source–Drain Electrodes in Bottom-Contact OTFTs

Chung, Seungjun; Jeong, Jaewook; Kim, Dong-Hyun; Park, Yunhwan; Lee, Changhee; Hong, Yongtaek

doi:10.1109/jdt.2011.2174963

Cited by 32 publications

(19 citation statements)

References 23 publications

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“…After the Ag ink was inkjet-printed at a drop velocity of 8 m/s and a drop-spacing of 30 μm onto a 60 °C substrate using a DMP-2831 (Fuji Films Corp.) printer, the sample was sintered on a 180 °C hot plate for 30 min under atmospheric environment. Note that no more oxidation-related degradations during other fabrication processes or measurements were not observed because the surface of printed Ag conductive layers is slightly oxidized during the sintering process . See the details in Figure S1 of the Supporting Information.…”

Section: Methodsmentioning

confidence: 99%

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

et al. 2016

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We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.

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Section: Methodsmentioning

confidence: 99%

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

et al. 2016

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“…Silver ion (Ag + ) has reached wide utilization area from jewelry designing [14] to photography [15] and electronic industry [16] over the years due to its prominent characteristics such as high thermal [17] and electrical conductivity [18], contact resistance [19] etc. Furthermore, due to its high antibacterial [20] and antifungal characteristics [20,21], silver ion is frequently used in medical applications as well, such as production of bone prostheses [22], dental amalgams [23], and catheters [24].…”

Section: Circular Dichroism (Cd) Spectrophotometry Analysismentioning

confidence: 99%

Triplex-forming DNA Probe Approach for Silver Detection and the Effect of C-G·C Triplet Distribution on Triplex Stability

Doluca

2019

Hittite J. Sci. Eng.

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B esides the knowledge that DNA is the primary hereditary molecule with possessing genetic code hidden in its double stranded helix form (B-form), an increasing number of evidence demonstrate that DNA, due to its non-canonical (non-B-form) structures, have regulatory functions on various cellular processes as well [1]. While duplex form of DNA is built up via Watson-Crick base pairing edges of nucleotide residues, some forms of the DNA are created by binding of auxiliary strands to a duplex DNA via Hoogsten base pairing edges of nucleotides [2,3]. In particular, triplex DNA forms have become one of the primary research areas due to the possibility of targeting regulatory regions of several oncogenes [2][3][4] and that their providing ease to manipulation due to exhibiting high stability in comparison to duplex forms [5].These triplex DNA forms could be created via binding of an auxiliary strand which is either rich in purine or pyrimidine, purine rich strand of the duplex DNA [6].

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“…[269] Ag inks have proven to be effective materials for fabricating electrical contacts in a variety of FET structures. [410,412] In particular, inkjet-printed Ag electrodes typically have a contact resistance of 1.8 MΩ cm in comparison to 0.55 MΩ cm for evaporated Ag electrodes in the bottom-contact geometry. [410,412] In particular, inkjet-printed Ag electrodes typically have a contact resistance of 1.8 MΩ cm in comparison to 0.55 MΩ cm for evaporated Ag electrodes in the bottom-contact geometry.…”

Section: Electrically Conductive Nanomaterials Inksmentioning

confidence: 99%

“…[259,260,410,411] The contact resistances of printed Ag electrodes are typically higher than those achieved by vacuum-based evaporation, due to Ag oxidation during annealing and the reduced contact area that results from the roughness of the printed electrodes. [412] Planar and 3D Ag interconnects have also been demonstrated. [412] Planar and 3D Ag interconnects have also been demonstrated.…”

Section: Electrically Conductive Nanomaterials Inksmentioning

confidence: 99%

Assembly and Electronic Applications of Colloidal Nanomaterials

2016

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Artificial solids and thin films assembled from colloidal nanomaterials give rise to versatile properties that can be exploited in a range of technologies. In particular, solution-based processes allow for the large-scale and low-cost production of nanoelectronics on rigid or mechanically flexible substrates. To achieve this goal, several processing steps require careful consideration, including nanomaterial synthesis or exfoliation, purification, separation, assembly, hybrid integration, and device testing. Using a ubiquitous electronic device - the field-effect transistor - as a platform, colloidal nanomaterials in three electronic material categories are reviewed systematically: semiconductors, conductors, and dielectrics. The resulting comparative analysis reveals promising opportunities and remaining challenges for colloidal nanomaterials in electronic applications, thereby providing a roadmap for future research and development.

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Contact Resistance of Inkjet-Printed Silver Source–Drain Electrodes in Bottom-Contact OTFTs

Cited by 32 publications

References 23 publications

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Triplex-forming DNA Probe Approach for Silver Detection and the Effect of C-G·C Triplet Distribution on Triplex Stability

Assembly and Electronic Applications of Colloidal Nanomaterials

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Contact Resistance of Inkjet-Printed Silver Source–Drain Electrodes in Bottom-Contact OTFTs

Cited by 32 publications

References 23 publications

Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Triplex-forming DNA Probe Approach for Silver Detection and the Effect of C-G·C Triplet Distribution on Triplex Stability

Assembly and Electronic Applications of Colloidal Nanomaterials

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Product

Resources

About

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts