Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Abstract

We report the electrical properties of synthesized large-area monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with low-cost inkjet-printed Ag electrodes. The monolayer MoS2 film was grown by a chemical vapor deposition (CVD) method, and the top-contact Ag source/drain electrodes (S/D) were deposited onto the films using a low-cost drop-on-demand inkjet-printing process without any masks and surface treatments. The electrical characteristics of FETs were comparable to those fabricated by conventional deposition methods such as photo- or electron beam lithography. The contact properties between the S/D and the semiconductor layer were also evaluated using the Y-function method and an analysis of the output characteristic at the low drain voltage regimes. Furthermore, the electrical instability under positive gate-bias stress was studied to investigate the charge-trapping mechanism of the FETs. CVD-grown large-area monolayer MoS2 FETs with inkjet-printed contacts may represent an attractive approach for realizing large-area and low-cost thin-film electronics.

Work of Adhesion Measurements of MoS2 Dry Lubricated 440C Stainless Steel Tribological Contacts

“…The hydrophobicity is impeded if the MoS 2 is slightly defective (CA % 70 ) [50] or if the sample is made of microsized particles (CA % 75 ). [51] These observations are consistent with the differences in CA measured inside the friction track after 3 and 150 cycles of friction (CA % 60 ) and outside the friction track (CA % 74 ) (Table 1). Indeed, the inside is shown to be comprised of a MoS x O y material, while the outside shows higher detection of Mo 2 S 3 À molecular ions and lower detection of MoS x O y À molecular ions (Table 1).…”

“…[49][50][51]54] In general, when the CA is low, W should be high. [49][50][51]54] In general, when the CA is low, W should be high.…”

Enhanced Device Stability of Ionic Gating Molybdenum Disulfide Transistors

“…The extracted values of τ and β were 4.1 × 10 5 s, ≈0.33 under PBS and 8.2 × 10 4 s, ≈0.37 under NBS, respectively. The carrier trapping time of the ionic gating MoS 2 transistor showed a long trapping time (≈10 5 s) compared with that of the previously reported MoS 2 transistors (≈10 3 s) . High carrier trapping time implies that relatively less V th shift occurs under the same stress conditions.…”

Assembly and Electronic Applications of Colloidal Nanomaterials

“…[409] The viscosity of Ag inks is tuned by adjusting the nanoparticle or binder concentrations to meet the requirements of a variety of printing methods including inkjet printing, [255] aerosol-jet printing, [255] pen writing,, [398] screen printing, [260] gravure printing, [259] and direct-write (3D) printing. [259,260,410,411] The contact resistances of printed Ag electrodes are typically higher than those achieved by vacuum-based evaporation, due to Ag oxidation during annealing and the reduced contact area that results from the roughness of the printed electrodes. [259,260,410,411] The contact resistances of printed Ag electrodes are typically higher than those achieved by vacuum-based evaporation, due to Ag oxidation during annealing and the reduced contact area that results from the roughness of the printed electrodes.…”

“…[269] Ag inks have proven to be effective materials for fabricating electrical contacts in a variety of FET structures. [410,412] In particular, inkjet-printed Ag electrodes typically have a contact resistance of 1.8 MΩ cm in comparison to 0.55 MΩ cm for evaporated Ag electrodes in the bottom-contact geometry. [410,412] In particular, inkjet-printed Ag electrodes typically have a contact resistance of 1.8 MΩ cm in comparison to 0.55 MΩ cm for evaporated Ag electrodes in the bottom-contact geometry.…”