Constant-capacitance deep-level optical spectroscopy

Vilanova, J.; Dueñas, S.; Rubio, E.; Bailón, L.; Barbolla, J.; Lora‐Tamayo, E.

doi:10.1016/0038-1101(89)90078-6

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…where [24,25].In the CC-DLOS measurement, a 10 s fill pulse at 0 V was used to set the Schottky diode into accumulation. Following the fill pulse the Schottky device was…”

Section: Methodsmentioning

confidence: 99%

“…Given that the GaN depletion used was ~96% of the total depletion, the CC-DLOS results mostly represent traps and other optical activity limited to the GaN buffer.The results will bear this out because even the AlGaN bandgap cannot be detected for the CC-DLOS measurements of the Schottky structures, meaning the CC-DLOS detrapping response is emanating amost entirely from the GaN buffer traps. More details about CC-DLOS for studying bulk semiconductor states are in [25].…”

Section: Methodsmentioning

confidence: 99%

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Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Sasikumar

Arehart

Cardwell

et al. 2016

Microelectronics Reliability

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Identification and characterization of a single, deep trap causing large increases in the on-resistance of GaN-on-Si power metal-insulator-semiconductorhigh electron mobility transistors(MISHEMTs) is reported. This is achieved by using HEMT-based deep level optical spectroscopy (DLOS) and related methods in conjunction with high voltage off-state V DS switching up to 400V. A trap with an activation energy of ~E C −2 eV that is physically located in the drain-access region of the MISHEMTis shown to be the primary source of an increase of the dynamic onresistance increase by as much as ~9 times at 400 V operation. Comparisons of trap signatures extracted from the MISHEMT with capacitance-based DLOS measurements of simple Schottky-diodetest-structures showing the same, dominant trap signature suggests that the physical defect is located within the GaN buffer and is not a surface or insulator-relateddefect.Abuffer trap based model is presented to explain the observed on-resistance degradation effects in the MISHEMTs during high voltage switching.

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“…where [24,25].In the CC-DLOS measurement, a 10 s fill pulse at 0 V was used to set the Schottky diode into accumulation. Following the fill pulse the Schottky device was…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Sasikumar

Arehart

Cardwell

et al. 2016

Microelectronics Reliability

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Admittance spectroscopy in junctions

Barbolla

Dueñas

Bailón

1992

Solid-State Electronics

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Optical capture cross sections of palladium in silicon

Rubio¹,

Vicente²,

Jaraı́z³

et al. 1991

Journal of Applied Physics

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Optical electron and hole capture cross sections for the deep levels E, -0.22 eV and E, + 0.33 eV associated to Pd in Si have been measured using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. The experimental results fit well to the model of Lucovsky. The threshold energies obtained for the electron and hole emission from the E, -0.22 eV level are 250 and 890 meV, respectively. The threshold energies obtained for the electron and hole emission from the E, + 0.33 eV level are 820 and 330 meV, respectively.

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Constant-capacitance deep-level optical spectroscopy

Cited by 4 publications

References 18 publications

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs

Admittance spectroscopy in junctions

Optical capture cross sections of palladium in silicon

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