Admittance spectroscopy in junctions

Barbolla, J.; Dueñas, S.; Bailón, L.

doi:10.1016/0038-1101(92)90232-2

Cited by 80 publications

(40 citation statements)

References 18 publications

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“…Electronic mail: helena@ele.uva.es. 14 , and 10 16 cm À2 ). Then, the implanted Si samples were annealed by means of the pulsed laser melting (PLM) method to recover the crystal lattice.…”

Section: Experimental Verification Of Intermediate Band Formation On mentioning

confidence: 88%

“…Thermal admittance spectroscopy 14 is a technique which yields thermal emission rates of deep levels from the variations of capacitance and conductance of a p-n or Schottky junction as a function of temperature and frequency. These variations are due to the change in frequency of the measuring signal with respect to the time constant of charge and discharge processes of the deep levels.…”

Section: B Admittance Spectroscopymentioning

confidence: 99%

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Experimental verification of intermediate band formation on titanium-implanted silicon

Castán¹,

Perez²,

García³

et al. 2013

Journal of Applied Physics

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Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28 eV below the conduction band for implantation doses in the range 10 13 -10 14 at./cm 2 . For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n þ /n junction. V C 2013 American Institute of Physics. [http://dx

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“…Electronic mail: helena@ele.uva.es. 14 , and 10 16 cm À2 ). Then, the implanted Si samples were annealed by means of the pulsed laser melting (PLM) method to recover the crystal lattice.…”

Section: Experimental Verification Of Intermediate Band Formation On mentioning

confidence: 88%

Section: B Admittance Spectroscopymentioning

confidence: 99%

Experimental verification of intermediate band formation on titanium-implanted silicon

Castán¹,

Perez²,

García³

et al. 2013

Journal of Applied Physics

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“…OM1 and OM2 samples have Ti profiles over the Mott limit up to 20 and 80 nm, respectively. 9 Samples were studied by means of Thermal Admittance Spectroscopy (TAS) technique, 10 which yields thermal emission rates of deep levels from the variations of capacitance and conductance of a p-n or Schottky junction as a function of temperature and frequency. These variations are due to the change in frequency of the measuring signal with respect to the time constants of charge and discharge processes of the deep levels.…”

mentioning

confidence: 99%

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Perez

Castán

García

et al. 2015

Applied Physics Letters

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In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

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“…The spectral resolution of the system was about 0.6 cm −1 . Electrical properties of fabricated Ni/ GaP 1−x N x Schottky structures were examined by conventional currentvoltage ͑I-V͒, capacitance-voltage ͑C-V͒, and thermal admittance spectroscopy 25 ͑TAS͒ measurements, using an HP4156A parameter analyzer and an HP4192A impedance analyzer. The sample temperature was swept from 30 to 300 K in a cryostat.…”

Section: Methodsmentioning

confidence: 99%

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

Kaneko

Hashizume

Odnoblyudov

et al. 2007

Journal of Applied Physics

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We have investigated electrical properties and deep levels of n-GaP1−xNx (x=0%−0.62%) grown on (100) n-GaP substrates by gas source molecular beam epitaxy. The x-ray photoelectron spectroscopy results showed no significant effects on the chemical bonding status of the host Ga-P matrix by the incorporation of small amounts of N atoms. In the Raman spectra, the zone-edge GaP-like vibration was observed at 387 cm−1, originating from alloy disorder or local distortion of the GaP1−xNx lattice. The electrical properties of the GaP1−xNx surfaces were characterized using a Schottky contact structure. An ideality factor of 1.10–1.15 and a Schottky barrier height of 1.1 eV were obtained from the current-voltage characteristics of Ni∕GaP1−xNx diodes, indicating good interface quality. The thermal admittance spectroscopy clearly detected the Si donor level with an activation energy of 84±4 meV in GaP and GaP1−xNx. For the GaP1−xNx samples, we observed deep levels probably associated with N-induced defects such as N-N pairs, N clusters, and an N-containing complexes.

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Admittance spectroscopy in junctions

Cited by 80 publications

References 18 publications

Experimental verification of intermediate band formation on titanium-implanted silicon

Experimental verification of intermediate band formation on titanium-implanted silicon

Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

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