Optical capture cross sections of palladium in silicon

Abstract

Optical electron and hole capture cross sections for the deep levels E, -0.22 eV and E, + 0.33 eV associated to Pd in Si have been measured using constant-capacitance deep level optical spectroscopy and optical admittance spectroscopy. The experimental results fit well to the model of Lucovsky. The threshold energies obtained for the electron and hole emission from the E, -0.22 eV level are 250 and 890 meV, respectively. The threshold energies obtained for the electron and hole emission from the E, + 0.33 eV level are 820 and 330 meV, respectively.