Conductivity Modulation of Porous Silicon by Formation Parameters

Abstract

Conductivity of Porous Silicon (PS) can be modulated significantly by controlling its formation parameters like anodization current density and HF concentration in the electro-chemical cell and the doping concentration of the silicon wafer. It is established that not only the porosity but also the uniformity of the PS layer determines conductivity of the PS layer. A quantitative relationship between the effective conductivity and uniformity and porosity of the PS layer is presented and verified experimentally.

Improved contacts on a porous silicon layer by electroless nickel plating and copper thickening

“…Comparing the values of the current density in both the cases with the J-V characteristics reported in [13] for 45% porosity we observe that the current density in our case (55% porosity) is only slightly lower which is in conformity with the fact that higher the porosity, lower is the conductivity. Also the resistance value which is obtained from our J-V characteristics is compatible with the theoretical value estimated from the generalized effective medium theory which is valid below percolation threshold of porous silicon as reported in our earlier published works [14].…”