Electrical Transport in Porous Silicon

Ram, Sanjay K.

doi:10.1007/978-3-319-05744-6_28

Cited by 4 publications

(3 citation statements)

References 65 publications

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“…Thereafter microporous silicon has been under intense investigation. Beside photoand electroluminescence also electrical- [33] and thermal [34] conductivity as well as optical [35,36] and mechanical [37] properties have been examined. In the middle of the 1990's V. Lehmann showed that not only microporous but also meso-and macroporous silicon can be produced by anodization [29,38,39].…”

Section: Microporous Siliconmentioning

confidence: 99%

Metal Filled Nanostructured Silicon With Respect to Magnetic and Optical Properties

Granitzer

Rumpf

2020

Front. Phys.

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Within this work the utilization of nanostructured silicon as host material for filling with various magnetic nanostructures is reviewed whereas the magnetic and optical properties of the gained composite systems are elucidated. The metal filling of the pores is mainly performed by electroless deposition or by electrodeposition which is discussed by means of some examples. Furthermore, two different types of porous silicon (PSi) morphology are used for the deposition procedure. On the one hand microporous silicon offering luminescence in the visible range is utilized as template material. It offers a branched morphology with a structure size between 2 and 5 nm. In this case not only the magnetic response is investigated but also the influence of the metal filling on the optical properties. On the other hand mesoporous and macroporous silicon in it's low pore regime is employed which offers straight pores with diameters up to 90 nm. In this case the magnetic response strongly depends on the size, the geometry and the spatial distribution of the metal deposits within the pores. A crucial role plays also the morphology of the porous silicon, especially the distance between adjacent pores which is an important parameter regarding magnetic interactions.

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Section: Microporous Siliconmentioning

confidence: 99%

Metal Filled Nanostructured Silicon With Respect to Magnetic and Optical Properties

Granitzer

Rumpf

2020

Front. Phys.

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“…It did not receive much interest, however until 1990 when Leigh Canham demonstrated luminescence from porous Si [20], which led to much excitement around the possibility of all Si photonic devices. Despite the excitement, commercial development of porous Si photonics has been prevented by the instability of the luminescence [21] and the material's high resistivity [22,23] due to Si's readiness to oxidise and high sensitivity to surface states. The opportunities arising from porous nitrides are not limited by these constraints, as they are highly inert and properties are much less affected by surface states.…”

Section: Introductionmentioning

confidence: 99%

Porous nitride semiconductors reviewed

Griffin

Oliver

2020

J. Phys. D: Appl. Phys.

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Porous nitride semiconductors are a fast-developing area of study, which open up a wide range of new properties and applications, including strain free optical reflectors, chemical sensors and as a pathway to device lift-off. This article reviews the current progress in porous nitrides formed through electrochemical and photoelectrochemical methods. Using a simple electrochemical cell, pores are formed by injecting holes into the surface layer in order to oxidise the material into a soluble form and releasing nitrogen gas. The process is controlled principally by the electric field that drives the injection of holes and hence the applied potential and doping density are the key parameters for controlling pore morphology, along with how and whether illumination is used. We describe the mechanisms responsible for this process in detail and outline the trends for changing pore size and pore shape. For example, larger applied potential creates a larger electric field and hence larger pores. These methods have been used to produce a wide variety of different structures. We present a layered porous structure created by the modulation of the applied potential. Alternatively, layered structures can be produced by growing alternate doped and non-intentionally doped layers. Electrochemical etching can then create pores only in the doped layers, as they are conductive. This process can be performed by etching laterally through access trenches that expose the doped material or through the etching of dislocations to create nanopipes that allow subsurface porosity to form. This process requires no prior processing steps. We combine this method with patterning of surface protective layers to influence where the resulting pores grow. Based on these various fabrication processes, significant progress has been made towards applications of porous GaN across optoelectronics, sensing and for improving material quality.

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“…However, the problem of fabrication of reproducible, low resistivity and stable contacts on a p -Si surface has probably influenced most studies to date 19 . Moreover, in many cases, p -Si samples are usually composed of a porous silicon layer on top of a crystalline silicon (c-Si) substrate, which might distort accurate estimation of the transport properties 20 – 22 . To avoid these problems in this work, we used free-standing thin membranes of p -Si and contactless ultrafast optical methods.…”

Section: Introductionmentioning

confidence: 99%

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

Yurkevich

et al. 2018

Sci Rep

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We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

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Electrical Transport in Porous Silicon

Cited by 4 publications

References 65 publications

Metal Filled Nanostructured Silicon With Respect to Magnetic and Optical Properties

Metal Filled Nanostructured Silicon With Respect to Magnetic and Optical Properties

Porous nitride semiconductors reviewed

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

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