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A composite material of plasmonic nanoparticles embedded in the scaffold of nanoporous Silicon offers unmatched capabilities to use it as a SERS substrate. The marriage of these components presents an...

We present an experimental investigation into the third-order nonlinearity of conventional crystalline (c-Si) and porous (p-Si) silicon with Z-scan technique at 800-nm and 2.4- μ m wavelengths. The Gaussian decomposition method is applied to extract the nonlinear refractive index, n 2 , and the two-photon absorption (TPA) coefficient, β , from the experimental results. The nonlinear refractive index obtained for c-Si is 7 ± 2 × 10 − 6 cm 2 /GW and for p-Si is − 9 ± 3 × 10 − 5 cm 2 /GW. The TPA coefficient was found to be 2.9 ± 0.9 cm/GW and 1.0 ± 0.3 cm/GW for c-Si and p-Si, respectively. We show an enhancement of the nonlinear refraction and a suppression of TPA in p-Si in comparison to c-Si, and the enhancement gets stronger as the wavelength increases.

We investigated and optimised the performance of the all-optical reflective modulation of the Mid-Wave Infrared (MWIR) signal by means of the optically-pumped sub-wavelength-structured optical membranes made of silicon. The membranes were optically pumped by a 60-femtosecond, 800-nm laser, while another laser operating in the MWIR ranging between 4 and 6 μ m was used to probe the optical response and modulation. We were able to achieve the conditions providing the modulation depth of 80% using the pump fluence of 3.8 mJ/cm 2 . To get a better insight into the performance and the modulation mechanism, we developed an optical model based on a combination of the Wentzel–Kramers–Brillouin approximation, Drude and Maxwell–Garnett theories. The model allowed us to estimate the values of the dielectric function, carrier concentration and scattering rate of the optically-excited membrane in the MWIR range. Using the model, we optimised the performance and found the conditions at which the reflective modulation can be operated with the ultrafast response of 0.55 ps and modulation contrast of 30%.

We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.