Conductivity and transparency in amorphous In-Zn-O transparent conductors

Perkins, John D.; Hest, Maikel F.A.M. van; Taylor, Matthew P.; Ginley, D. S.

doi:10.1504/ijnt.2009.026744

Cited by 16 publications

(7 citation statements)

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“…The system of zinc‐substituted indium oxide (a‐IZO) is a strong candidate to develop the understanding of defects in amorphous oxides due to its technological relevance and thermal stability. Despite the difference in ionization state (Zn: 2

^{+}

, In: 3

^{+}

) combinatorial studies of a‐IZO have shown a complete absence of p‐type character . Additionally, composition has minimal effect on carrier concentration and has been shown to have no effect on the relationship between carrier concentration and mobility .…”

Section: Introductionmentioning

confidence: 99%

“…Additionally, composition has minimal effect on carrier concentration and has been shown to have no effect on the relationship between carrier concentration and mobility . Conversely, the amount of oxygen present during film deposition has drastic effects on carrier concentration . In order to understand the persistent n‐type character in a‐IZO, as well as the drastic effects of oxygen content during deposition, the dominant defect mechanism in this system must be identified.…”

Section: Introductionmentioning

confidence: 99%

“…Despite the difference in ionization state (Zn: 2 þ , In: 3 þ ) combinatorial studies of a-IZO have shown a complete absence of p-type character. [6][7][8] Additionally, composition has minimal effect on carrier concentration and has been shown to have no effect on the relationship between carrier concentration and mobility. 6,7 Conversely, the amount of oxygen present during film deposition has drastic effects on carrier concentration.…”

Section: Introductionmentioning

confidence: 99%

“…6,7 Conversely, the amount of oxygen present during film deposition has drastic effects on carrier concentration. [7][8][9] In order to understand the persistent n-type character in a-IZO, as well as the drastic effects of oxygen content during deposition, the dominant defect mechanism in this system must be identified.…”

Section: Introductionmentioning

confidence: 99%

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Confirmation of the Dominant Defect Mechanism in Amorphous In–Zn–O Through the Application of In Situ Brouwer Analysis

et al. 2015

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The dominant point defect mechanism of amorphous (a‐) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a‐IZO thin films in response to changes in oxygen partial pressure (pO2) at 300∘C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼−1/6. This experimental method, known as Brouwer analysis, confirms doubly‐charged oxygen vacancies as the dominant defect species in a‐IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

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^{+}

, In: 3

^{+}

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Confirmation of the Dominant Defect Mechanism in Amorphous In–Zn–O Through the Application of In Situ Brouwer Analysis

et al. 2015

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“…From prior work on a-IZO grown from ceramic In 2 O 3 /ZnO targets, it is known that the optimum oxygen content to maximize the conductivity depends on the In:Zn ratio [4] and hence if the In:Zn ratio changes during deposition, the conductivity will decrease. Accordingly, optimizing the conductivity of a-IZO thin films requires careful In-content-specific optimization of the oxygen content of the sputter gas mix.…”

Section: Resultsmentioning

confidence: 99%

Reactive sputtering of amorphous In-Zn-O TCO from metallic targets

Perkins

Nix

Dameron

et al. 2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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Amorphous In-Zn-O (a-IZO) transparent conducting oxides with conductivity σ ≈ 3000 S/cm can be sputter deposited at ambient temperature, are damp-heat resistant and have been demonstrated to work well as transparent contacts for CIGS PV and Epi-Si PV. However, the high cost of ceramic InZn-O sputter targets has limited the widespread use of a-IZO TCOs in PV. Here, we demonstrate a new process that results in conductive and transparent a-InZnO thin films deposited via reactive sputtering from a metallic In-Zn alloy target. The highest conductivity obtained to date, σ ≈ 2100 S/cm, is an order of magnitude higher than the previous best literature result for reactively sputtered a-InZnO.Index Terms -get from keywords@ieee.org.

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Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

Crǎciun

Crăciun

2017

Applied Surface Science

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Conductivity and transparency in amorphous In-Zn-O transparent conductors

Cited by 16 publications

References 0 publications

Confirmation of the Dominant Defect Mechanism in Amorphous In–Zn–O Through the Application of In Situ Brouwer Analysis

Confirmation of the Dominant Defect Mechanism in Amorphous In–Zn–O Through the Application of In Situ Brouwer Analysis

Reactive sputtering of amorphous In-Zn-O TCO from metallic targets

Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

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