2017
DOI: 10.1016/j.apsusc.2016.12.094
|View full text |Cite
|
Sign up to set email alerts
|

Pulsed laser deposition of HfO2 thin films on indium zinc oxide: Band offsets measurements

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
1
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 27 publications
0
1
0
Order By: Relevance
“…Nowadays HfO 2 is usually prepared by techniques such as atomic layer deposition, 16 sputtering, 5 pulsed laser deposition, 17 chemical vapor deposition, 18 high energy ion beam assisted deposition 19 and sol-gel methods. 20 An alternative technique to the classical methods of electronic industry to fabricate oxides-based devices is the anodizing, a simple and low cost process that allows to strictly and easily tailor oxides structure, thickness, composition and morphology by controlling the metal or alloy composition as well as the oxidation conditions.…”
mentioning
confidence: 99%
“…Nowadays HfO 2 is usually prepared by techniques such as atomic layer deposition, 16 sputtering, 5 pulsed laser deposition, 17 chemical vapor deposition, 18 high energy ion beam assisted deposition 19 and sol-gel methods. 20 An alternative technique to the classical methods of electronic industry to fabricate oxides-based devices is the anodizing, a simple and low cost process that allows to strictly and easily tailor oxides structure, thickness, composition and morphology by controlling the metal or alloy composition as well as the oxidation conditions.…”
mentioning
confidence: 99%